Ag-catalyzed InAs nanowires grown on transferable graphite flakes

Jakob Meyer-Holdt, Thomas Kanne, Joachim E. Sestoft, Aske Nørskov Gejl, Lunjie Zeng, Erik Johnson, Eva Olsson, Jesper Nygaard, Peter Krogstrup

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.
Original languageEnglish
Article number365603
JournalNanotechnology
Volume27
Issue number36
Number of pages7
ISSN0957-4484
DOIs
Publication statusPublished - 2016

Keywords

  • Ag-seeded nanowire
  • Nanowire
  • Molecular beam epitaxy
  • Graphene
  • InAs
  • Hybrid structures

Cite this

Meyer-Holdt, J., Kanne, T., Sestoft, J. E., Gejl, A. N., Zeng, L., Johnson, E., ... Krogstrup, P. (2016). Ag-catalyzed InAs nanowires grown on transferable graphite flakes. Nanotechnology, 27(36), [365603]. https://doi.org/10.1088/0957-4484/27/36/365603