Advances in wide bandgap SiC for optoelectronics

Research output: Contribution to journalJournal article – Annual report year: 2014Researchpeer-review

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Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.
Original languageEnglish
Article number58
JournalEuropean Physical Journal B. Condensed Matter and Complex Systems
Volume87
Issue number3
Number of pages16
ISSN1434-6028
DOIs
Publication statusPublished - 2014
CitationsWeb of Science® Times Cited: No match on DOI

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