Advances in wide bandgap SiC for optoelectronics

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta K. Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl, Mikael Syväjärvi

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.
Original languageEnglish
Article number58
JournalEuropean Physical Journal B. Condensed Matter and Complex Systems
Volume87
Issue number3
Number of pages16
ISSN1434-6028
DOIs
Publication statusPublished - 2014

Cite this

Ou, Haiyan ; Ou, Yiyu ; Argyraki, Aikaterini ; Schimmel, Saskia ; Kaiser, Michl ; Wellmann, Peter ; Linnarsson, Margareta K. ; Jokubavicius, Valdas ; Sun, Jianwu ; Liljedahl, Rickard ; Syväjärvi, Mikael. / Advances in wide bandgap SiC for optoelectronics. In: European Physical Journal B. Condensed Matter and Complex Systems. 2014 ; Vol. 87, No. 3.
@article{6cc115287bbc42b4b8269dec4108bd8e,
title = "Advances in wide bandgap SiC for optoelectronics",
abstract = "Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.",
author = "Haiyan Ou and Yiyu Ou and Aikaterini Argyraki and Saskia Schimmel and Michl Kaiser and Peter Wellmann and Linnarsson, {Margareta K.} and Valdas Jokubavicius and Jianwu Sun and Rickard Liljedahl and Mikael Syv{\"a}j{\"a}rvi",
year = "2014",
doi = "10.1140/epjb/e2014-41100-0",
language = "English",
volume = "87",
journal = "European Physical Journal B. Condensed Matter and Complex Systems",
issn = "1434-6028",
publisher = "Springer",
number = "3",

}

Ou, H, Ou, Y, Argyraki, A, Schimmel, S, Kaiser, M, Wellmann, P, Linnarsson, MK, Jokubavicius, V, Sun, J, Liljedahl, R & Syväjärvi, M 2014, 'Advances in wide bandgap SiC for optoelectronics', European Physical Journal B. Condensed Matter and Complex Systems, vol. 87, no. 3, 58. https://doi.org/10.1140/epjb/e2014-41100-0

Advances in wide bandgap SiC for optoelectronics. / Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini; Schimmel, Saskia; Kaiser, Michl; Wellmann, Peter; Linnarsson, Margareta K.; Jokubavicius, Valdas; Sun, Jianwu; Liljedahl, Rickard; Syväjärvi, Mikael.

In: European Physical Journal B. Condensed Matter and Complex Systems, Vol. 87, No. 3, 58, 2014.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Advances in wide bandgap SiC for optoelectronics

AU - Ou, Haiyan

AU - Ou, Yiyu

AU - Argyraki, Aikaterini

AU - Schimmel, Saskia

AU - Kaiser, Michl

AU - Wellmann, Peter

AU - Linnarsson, Margareta K.

AU - Jokubavicius, Valdas

AU - Sun, Jianwu

AU - Liljedahl, Rickard

AU - Syväjärvi, Mikael

PY - 2014

Y1 - 2014

N2 - Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

AB - Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

U2 - 10.1140/epjb/e2014-41100-0

DO - 10.1140/epjb/e2014-41100-0

M3 - Journal article

VL - 87

JO - European Physical Journal B. Condensed Matter and Complex Systems

JF - European Physical Journal B. Condensed Matter and Complex Systems

SN - 1434-6028

IS - 3

M1 - 58

ER -