Advances in wide bandgap SiC for optoelectronics

Haiyan Ou; Yiyu Ou; Aikaterini Argyraki; Saskia Schimmel; Michl Kaiser; Peter Wellmann; Margareta K. Linnarsson; Valdas Jokubavicius; Jianwu Sun; Rickard Liljedahl; Mikael Syväjärvi

doi:10.1140/epjb/e2014-41100-0

Advances in wide bandgap SiC for optoelectronics

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki, Saskia Schimmel, Michl Kaiser, Peter Wellmann, Margareta K. Linnarsson, Valdas Jokubavicius, Jianwu Sun, Rickard Liljedahl, Mikael Syväjärvi

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

Original language	English
Article number	58
Journal	European Physical Journal B. Condensed Matter and Complex Systems
Volume	87
Issue number	3
Number of pages	16
ISSN	1434-6028
DOIs	https://doi.org/10.1140/epjb/e2014-41100-0
Publication status	Published - 2014

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39th International Conference on Micro and Nano Engineering
Argyraki, A. (Speaker)
16 Sept 2013 → 19 Sept 2013
Activity: Talks and presentations › Conference presentations

MNE 2013 Micro Nano Graph Contest, honorable mention
Argyraki, A. (Recipient), 16 Sept 2013
Prize: Prizes, scholarships, distinctions

Cite this

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title = "Advances in wide bandgap SiC for optoelectronics",

abstract = "Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.",

author = "Haiyan Ou and Yiyu Ou and Aikaterini Argyraki and Saskia Schimmel and Michl Kaiser and Peter Wellmann and Linnarsson, {Margareta K.} and Valdas Jokubavicius and Jianwu Sun and Rickard Liljedahl and Mikael Syv{\"a}j{\"a}rvi",

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T1 - Advances in wide bandgap SiC for optoelectronics

AU - Ou, Haiyan

AU - Ou, Yiyu

AU - Argyraki, Aikaterini

AU - Schimmel, Saskia

AU - Kaiser, Michl

AU - Wellmann, Peter

AU - Linnarsson, Margareta K.

AU - Jokubavicius, Valdas

AU - Sun, Jianwu

AU - Liljedahl, Rickard

AU - Syväjärvi, Mikael

PY - 2014

Y1 - 2014

N2 - Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

AB - Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.

U2 - 10.1140/epjb/e2014-41100-0

DO - 10.1140/epjb/e2014-41100-0

M3 - Journal article

SN - 1434-6028

VL - 87

JO - European Physical Journal B. Condensed Matter and Complex Systems

JF - European Physical Journal B. Condensed Matter and Complex Systems

IS - 3

M1 - 58

ER -

Advances in wide bandgap SiC for optoelectronics

Abstract

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Activities

39th International Conference on Micro and Nano Engineering

Prizes

MNE 2013 Micro Nano Graph Contest, honorable mention

Cite this