Advanced characterization of carrier profiles in germanium using micro-machined contact probes

T. Clarysse, M. Konttinen, B. Parmentier, A. Moussa, W. Vandervorst, G. Impellizzeri, E. Napolitani, V. Privitera, Peter Folmer Nielsen, Dirch Hjorth Petersen, Ole Hansen

Research output: Contribution to journalConference articleResearchpeer-review


The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering the use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (~10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate the properties of both approaches on Al+ implants in germanium with different anneal treatments.
Original languageEnglish
JournalA I P Conference Proceedings Series
Pages (from-to)167-170
Publication statusPublished - 2012
EventInternational Conference on Ion Implantation Technology - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012
Conference number: 19th


ConferenceInternational Conference on Ion Implantation Technology

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