Abstract
For high voltages converters stacks of IGBTs can be used if the static and dynamic voltage sharing among the IGBTs can be applied. dVCE/dt should also be controlled in order not to damage insulation material. This paper describes theory and measurements of an active gate driver for stacking IGBTs. For the measurements two series connected standard IGBTs made for hard switching applications are used. Problems are shown and proposals for improvements are given.
Original language | English |
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Title of host publication | European Conference on Power Electronics and Applications, 2005 |
Place of Publication | Brussels, Belgium |
Publisher | IEEE |
Publication date | 2005 |
Edition | First |
ISBN (Print) | 90-75815-08-5 |
DOIs | |
Publication status | Published - 2005 |
Event | Active gate driver for dv/dt control and active voltage clamping in an IGBT stack - Dresden Duration: 1 Jan 2005 → … |
Conference
Conference | Active gate driver for dv/dt control and active voltage clamping in an IGBT stack |
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City | Dresden |
Period | 01/01/2005 → … |
Bibliographical note
Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEEKeywords
- Voltage Source Converter
- Converter circuit
- Regulation
- IGBT
- Converter control