In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.
|Title of host publication||17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.|
|Publication status||Published - 2009|
|Event||17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States|
Duration: 29 Sept 2009 → 2 Oct 2009
Conference number: 17
|Conference||17th International Conference on Advanced Thermal Processing of Semiconductors RTP09|
|Period||29/09/2009 → 02/10/2009|