Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

K. Huet, Rong Lin, C Boniface, F Desse, Dirch Hjorth Petersen, Ole Hansen, N Variam, A La Magna, M Schuhmacher, A. Jensen, P.F Nielsen, H Besaucele, J Venturini

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Abstract

In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.
Original languageEnglish
Title of host publication17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.
PublisherIEEE
Publication date2009
Pages1-19
ISBN (Print)978-1-4244-3814-3
DOIs
Publication statusPublished - 2009
Event17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States
Duration: 29 Sep 20092 Oct 2009
Conference number: 17

Conference

Conference17th International Conference on Advanced Thermal Processing of Semiconductors RTP09
Number17
CountryUnited States
CityAlbany
Period29/09/200902/10/2009

Cite this

Huet, K., Lin, R., Boniface, C., Desse, F., Petersen, D. H., Hansen, O., ... Venturini, J. (2009). Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance. In 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09. (pp. 1-19). IEEE. https://doi.org/10.1109/RTP.2009.5373465