Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

K. Huet; Rong Lin; C Boniface; F Desse; Dirch Hjorth Petersen; Ole Hansen; N Variam; A La Magna; M Schuhmacher; A. Jensen; P.F Nielsen; H Besaucele; J Venturini

doi:10.1109/RTP.2009.5373465

Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

K. Huet, Rong Lin, C Boniface, F Desse, Dirch Hjorth Petersen, Ole Hansen, N Variam, A La Magna, M Schuhmacher, A. Jensen, P.F Nielsen, H Besaucele, J Venturini

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

Abstract

In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.

Original language	English
Title of host publication	17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.
Publisher	IEEE
Publication date	2009
Pages	1-19
ISBN (Print)	978-1-4244-3814-3
DOIs	https://doi.org/10.1109/RTP.2009.5373465
Publication status	Published - 2009
Event	17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States Duration: 29 Sept 2009 → 2 Oct 2009 Conference number: 17

Conference

Conference	17th International Conference on Advanced Thermal Processing of Semiconductors RTP09
Number	17
Country/Territory	United States
City	Albany
Period	29/09/2009 → 02/10/2009

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Huet, K., Lin, R., Boniface, C., Desse, F., Petersen, D. H., Hansen, O., Variam, N., La Magna, A., Schuhmacher, M., Jensen, A., Nielsen, P. F., Besaucele, H., & Venturini, J. (2009). Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance. In 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09. (pp. 1-19). IEEE. https://doi.org/10.1109/RTP.2009.5373465

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title = "Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance",

abstract = "In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.",

author = "K. Huet and Rong Lin and C Boniface and F Desse and Petersen, {Dirch Hjorth} and Ole Hansen and N Variam and {La Magna}, A and M Schuhmacher and A. Jensen and P.F Nielsen and H Besaucele and J Venturini",

year = "2009",

doi = "10.1109/RTP.2009.5373465",

language = "English",

isbn = "978-1-4244-3814-3",

pages = "1--19",

booktitle = "17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.",

publisher = "IEEE",

address = "United States",

note = "17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 ; Conference date: 29-09-2009 Through 02-10-2009",

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Huet, K, Lin, R, Boniface, C, Desse, F, Petersen, DH, Hansen, O, Variam, N, La Magna, A, Schuhmacher, M, Jensen, A, Nielsen, PF, Besaucele, H & Venturini, J 2009, Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance. in 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.. IEEE, pp. 1-19, 17th International Conference on Advanced Thermal Processing of Semiconductors RTP09, Albany, New York, United States, 29/09/2009. https://doi.org/10.1109/RTP.2009.5373465

Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance. / Huet, K.; Lin, Rong; Boniface, C et al.
17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.. IEEE, 2009. p. 1-19.

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

TY - ABST

T1 - Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

AU - Huet, K.

AU - Lin, Rong

AU - Boniface, C

AU - Desse, F

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Variam, N

AU - La Magna, A

AU - Schuhmacher, M

AU - Jensen, A.

AU - Nielsen, P.F

AU - Besaucele, H

AU - Venturini, J

N1 - Conference code: 17

PY - 2009

Y1 - 2009

N2 - In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.

AB - In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.

U2 - 10.1109/RTP.2009.5373465

DO - 10.1109/RTP.2009.5373465

M3 - Conference abstract in proceedings

SN - 978-1-4244-3814-3

SP - 1

EP - 19

BT - 17th International Conference on Advanced Thermal Processing of Semiconductors, 2009. RTP '09.

PB - IEEE

T2 - 17th International Conference on Advanced Thermal Processing of Semiconductors RTP09

Y2 - 29 September 2009 through 2 October 2009

ER -

Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

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