Acoustoelectric interaction in degenerately doped piezoelectric semiconductors

Erik Mosekilde

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Abstract

The acoustoelectric gain constant is calculated quantum mechanically for arbitrary degeneracy of the electron gas. The requirements of energy and momentum conservation in individual electron-phonon interactions result in a rather sharp reduction of the gain factor when the acoustic wave number exceeds the characteristic linear extension of the electron distribution in reciprocal space. A simple two-band model is developed to describe effects of impurity banding upon the acoustoelectric interaction. According to this model, impurity banding enhances the acoustoelectric coupling and widens the active acoustic spectrum. These effects are associated with the increased density of states near the conduction-band edge and with the presence of electrons of higher momentum effective mass than the conduction-band electrons. At low temperatures it becomes possible for the linear gain factor as a function of acoustic frequency to have two maxima. ©1972 The American Institute of Physics
Original languageEnglish
JournalJournal of Applied Physics
Volume43
Issue number12
Pages (from-to)4957-4963
ISSN0021-8979
DOIs
Publication statusPublished - 1972

Bibliographical note

Copyright (1972) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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