Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 Ã— 430 Â¿m2, and the probe pitches range from 20 Â¿m to 50 Â¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.
|Title of host publication||17th IEEE International conference on Advanced Thermal Processing of Semiconductors, RTP09|
|Publication status||Published - 2009|
|Event||17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States|
Duration: 29 Sep 2009 → 2 Oct 2009
Conference number: 17
|Conference||17th International Conference on Advanced Thermal Processing of Semiconductors RTP09|
|Period||29/09/2009 → 02/10/2009|