Accurate micro Hall effect measurements on scribe line pads

Frederik Westergaard Østerberg; Dirch Hjorth Petersen; Fei Wang; E. Rosseel; W. Vandervorst; Ole Hansen

doi:10.1109/RTP.2009.5373450

Accurate micro Hall effect measurements on scribe line pads

Frederik Westergaard Østerberg, Dirch Hjorth Petersen, Fei Wang, E. Rosseel, W. Vandervorst, Ole Hansen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 Ã— 430 Â¿m2, and the probe pitches range from 20 Â¿m to 50 Â¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.

Original language	English
Title of host publication	17th IEEE International conference on Advanced Thermal Processing of Semiconductors, RTP09
Publisher	IEEE
Publication date	2009
Pages	157-162
ISBN (Print)	978-1-4244-3814-3
DOIs	https://doi.org/10.1109/RTP.2009.5373450
Publication status	Published - 2009
Event	17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States Duration: 29 Sept 2009 → 2 Oct 2009 Conference number: 17

Conference

Conference	17th International Conference on Advanced Thermal Processing of Semiconductors RTP09
Number	17
Country/Territory	United States
City	Albany
Period	29/09/2009 → 02/10/2009

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Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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title = "Accurate micro Hall effect measurements on scribe line pads",

abstract = "Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 {\~A}— 430 {\^A}¿m2, and the probe pitches range from 20 {\^A}¿m to 50 {\^A}¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.",

author = "{\O}sterberg, {Frederik Westergaard} and Petersen, {Dirch Hjorth} and Fei Wang and E. Rosseel and W. Vandervorst and Ole Hansen",

note = "Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; 17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 ; Conference date: 29-09-2009 Through 02-10-2009",

year = "2009",

doi = "10.1109/RTP.2009.5373450",

language = "English",

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booktitle = "17th IEEE International conference on Advanced Thermal Processing of Semiconductors, RTP09",

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Østerberg, FW, Petersen, DH, Wang, F, Rosseel, E, Vandervorst, W & Hansen, O 2009, Accurate micro Hall effect measurements on scribe line pads. in 17th IEEE International conference on Advanced Thermal Processing of Semiconductors, RTP09. IEEE, pp. 157-162, 17th International Conference on Advanced Thermal Processing of Semiconductors RTP09, Albany, New York, United States, 29/09/2009. https://doi.org/10.1109/RTP.2009.5373450

Accurate micro Hall effect measurements on scribe line pads. / Østerberg, Frederik Westergaard; Petersen, Dirch Hjorth; Wang, Fei et al.
17th IEEE International conference on Advanced Thermal Processing of Semiconductors, RTP09. IEEE, 2009. p. 157-162.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Østerberg, Frederik Westergaard

AU - Petersen, Dirch Hjorth

AU - Wang, Fei

AU - Rosseel, E.

AU - Vandervorst, W.

AU - Hansen, Ole

N1 - Conference code: 17

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N2 - Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 Ã— 430 Â¿m2, and the probe pitches range from 20 Â¿m to 50 Â¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.

AB - Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 Ã— 430 Â¿m2, and the probe pitches range from 20 Â¿m to 50 Â¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.

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ER -

Accurate micro Hall effect measurements on scribe line pads

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