Accurate micro Hall effect measurements on scribe line pads

Frederik Westergaard Østerberg, Dirch Hjorth Petersen, Fei Wang, E. Rosseel, W. Vandervorst, Ole Hansen

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Abstract

Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 × 430 ¿m2, and the probe pitches range from 20 ¿m to 50 ¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method.
Original languageEnglish
Title of host publication17th IEEE International conference on Advanced Thermal Processing of Semiconductors, RTP09
PublisherIEEE
Publication date2009
Pages157-162
ISBN (Print)978-1-4244-3814-3
DOIs
Publication statusPublished - 2009
Event17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 - Albany, United States
Duration: 29 Sep 20092 Oct 2009
Conference number: 17

Conference

Conference17th International Conference on Advanced Thermal Processing of Semiconductors RTP09
Number17
CountryUnited States
CityAlbany
Period29/09/200902/10/2009

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