Accelerated ceria–zirconia solubilization by cationic diffusion inversion at low oxygen activity

Vincenzo Esposito, De Wei Ni, Debora Marani, Francesca Teocoli, Karl Tor Sune Thydén, Daniel Zanetti De Florio, Fabio Coral Fonseca

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Fast elemental diffusion at the Gd-doped ceria/Y-stabilized zirconia interface occurs under reducing conditions at low oxygen activity (pO2 < 10−12 atm) and high temperature (1400 °C). This effect leads to formation of thick ceria–zirconia solid solution reaction layers in the micro-range vs. thin layers of few tens of nanometers under oxidative conditions (i.e. in synthetic air at pO2 = 0.21 atm). The fast dissolution occurs by an inversion of the dominating limiting mechanism from the expected Zr4+ diffusion into the CGO lattice at high pO2 to an unexpected Ce3+ diffusion into the YSZ component under reducing conditions. The diffusion coefficient of 8-fold coordinated Ce3+ in YSZ at 1400 °C and pO2 = 10−13 atm is estimated to be around 10−11 cm2 s−1. This value is around 3 orders of magnitude higher than Zr4+ interdiffusion in CGO under oxidative conditions and about 8 orders of magnitude higher than Ce4+ self-diffusion in CGO in air at the same temperature.

Original languageEnglish
JournalJournal of Materials Chemistry A
Volume4
Issue number43
Pages (from-to)16871-16878
Number of pages8
ISSN2050-7488
DOIs
Publication statusPublished - 2016

Bibliographical note

This article is part of themed collection: 2016 Journal of Materials Chemistry A HOT Papers

Cite this

Esposito, Vincenzo ; Ni, De Wei ; Marani, Debora ; Teocoli, Francesca ; Thydén, Karl Tor Sune ; Zanetti De Florio, Daniel ; Coral Fonseca, Fabio. / Accelerated ceria–zirconia solubilization by cationic diffusion inversion at low oxygen activity. In: Journal of Materials Chemistry A. 2016 ; Vol. 4, No. 43. pp. 16871-16878.
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title = "Accelerated ceria–zirconia solubilization by cationic diffusion inversion at low oxygen activity",
abstract = "Fast elemental diffusion at the Gd-doped ceria/Y-stabilized zirconia interface occurs under reducing conditions at low oxygen activity (pO2 < 10−12 atm) and high temperature (1400 °C). This effect leads to formation of thick ceria–zirconia solid solution reaction layers in the micro-range vs. thin layers of few tens of nanometers under oxidative conditions (i.e. in synthetic air at pO2 = 0.21 atm). The fast dissolution occurs by an inversion of the dominating limiting mechanism from the expected Zr4+ diffusion into the CGO lattice at high pO2 to an unexpected Ce3+ diffusion into the YSZ component under reducing conditions. The diffusion coefficient of 8-fold coordinated Ce3+ in YSZ at 1400 °C and pO2 = 10−13 atm is estimated to be around 10−11 cm2 s−1. This value is around 3 orders of magnitude higher than Zr4+ interdiffusion in CGO under oxidative conditions and about 8 orders of magnitude higher than Ce4+ self-diffusion in CGO in air at the same temperature.",
author = "Vincenzo Esposito and Ni, {De Wei} and Debora Marani and Francesca Teocoli and Thyd{\'e}n, {Karl Tor Sune} and {Zanetti De Florio}, Daniel and {Coral Fonseca}, Fabio",
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Accelerated ceria–zirconia solubilization by cationic diffusion inversion at low oxygen activity. / Esposito, Vincenzo; Ni, De Wei; Marani, Debora; Teocoli, Francesca; Thydén, Karl Tor Sune; Zanetti De Florio, Daniel; Coral Fonseca, Fabio.

In: Journal of Materials Chemistry A, Vol. 4, No. 43, 2016, p. 16871-16878.

Research output: Contribution to journalJournal articleResearchpeer-review

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AU - Esposito, Vincenzo

AU - Ni, De Wei

AU - Marani, Debora

AU - Teocoli, Francesca

AU - Thydén, Karl Tor Sune

AU - Zanetti De Florio, Daniel

AU - Coral Fonseca, Fabio

N1 - This article is part of themed collection: 2016 Journal of Materials Chemistry A HOT Papers

PY - 2016

Y1 - 2016

N2 - Fast elemental diffusion at the Gd-doped ceria/Y-stabilized zirconia interface occurs under reducing conditions at low oxygen activity (pO2 < 10−12 atm) and high temperature (1400 °C). This effect leads to formation of thick ceria–zirconia solid solution reaction layers in the micro-range vs. thin layers of few tens of nanometers under oxidative conditions (i.e. in synthetic air at pO2 = 0.21 atm). The fast dissolution occurs by an inversion of the dominating limiting mechanism from the expected Zr4+ diffusion into the CGO lattice at high pO2 to an unexpected Ce3+ diffusion into the YSZ component under reducing conditions. The diffusion coefficient of 8-fold coordinated Ce3+ in YSZ at 1400 °C and pO2 = 10−13 atm is estimated to be around 10−11 cm2 s−1. This value is around 3 orders of magnitude higher than Zr4+ interdiffusion in CGO under oxidative conditions and about 8 orders of magnitude higher than Ce4+ self-diffusion in CGO in air at the same temperature.

AB - Fast elemental diffusion at the Gd-doped ceria/Y-stabilized zirconia interface occurs under reducing conditions at low oxygen activity (pO2 < 10−12 atm) and high temperature (1400 °C). This effect leads to formation of thick ceria–zirconia solid solution reaction layers in the micro-range vs. thin layers of few tens of nanometers under oxidative conditions (i.e. in synthetic air at pO2 = 0.21 atm). The fast dissolution occurs by an inversion of the dominating limiting mechanism from the expected Zr4+ diffusion into the CGO lattice at high pO2 to an unexpected Ce3+ diffusion into the YSZ component under reducing conditions. The diffusion coefficient of 8-fold coordinated Ce3+ in YSZ at 1400 °C and pO2 = 10−13 atm is estimated to be around 10−11 cm2 s−1. This value is around 3 orders of magnitude higher than Zr4+ interdiffusion in CGO under oxidative conditions and about 8 orders of magnitude higher than Ce4+ self-diffusion in CGO in air at the same temperature.

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