Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

J Riishøj; Per Lander Danielsen

doi:10.1109/EUMA.1992.335686

Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

J Riishøj, Per Lander Danielsen

Technical University of Denmark

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage transition times of Tt(20%-80%)=35ps are obtained by implementation of a novel output driver design.

Original language	English
Title of host publication	Proceedings of the 22nd European Microwave Conference
Volume	Volume 1
Publisher	IEEE
Publication date	1992
Pages	313-317
DOIs	https://doi.org/10.1109/EUMA.1992.335686
Publication status	Published - 1992
Event	22nd European Microwave Conference - Helsinki, Finland Duration: 5 Sep 1992 → 9 Sep 1992 Conference number: 22 http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4135427

Conference

Conference	22nd European Microwave Conference
Number	22
Country/Territory	Finland
City	Helsinki
Period	05/09/1992 → 09/09/1992
Internet address	http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4135427

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Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{417322c6953c4b808a1d3e6e5746b3b7,

title = "Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs",

abstract = "A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage transition times of Tt(20%-80%)=35ps are obtained by implementation of a novel output driver design.",

author = "J Riish{\o}j and Danielsen, {Per Lander}",

note = "Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 22nd European Microwave Conference ; Conference date: 05-09-1992 Through 09-09-1992",

year = "1992",

doi = "10.1109/EUMA.1992.335686",

language = "English",

volume = "Volume 1",

pages = "313--317",

booktitle = "Proceedings of the 22nd European Microwave Conference",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4135427",

}

TY - GEN

T1 - Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

AU - Riishøj, J

AU - Danielsen, Per Lander

N1 - Conference code: 22

PY - 1992

Y1 - 1992

N2 - A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage transition times of Tt(20%-80%)=35ps are obtained by implementation of a novel output driver design.

AB - A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage transition times of Tt(20%-80%)=35ps are obtained by implementation of a novel output driver design.

U2 - 10.1109/EUMA.1992.335686

DO - 10.1109/EUMA.1992.335686

M3 - Article in proceedings

VL - Volume 1

SP - 313

EP - 317

BT - Proceedings of the 22nd European Microwave Conference

PB - IEEE

T2 - 22nd European Microwave Conference

Y2 - 5 September 1992 through 9 September 1992

ER -

Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

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