Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As

András Kovács, Takeshi Kasama, J. Sadowski, T. Dietl, Rafal E. Dunin-Borkowski

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.
    Original languageEnglish
    Book seriesJournal of Physics: Conference Series
    Volume326
    Issue number1
    Pages (from-to)012018
    ISSN1742-6588
    DOIs
    Publication statusPublished - 2011
    Event17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 17

    Conference

    Conference17th International Conference on Microscopy of Semiconducting Materials
    Number17
    LocationUniversity of Cambridge
    CountryUnited Kingdom
    CityCambridge
    Period04/04/201107/04/2011

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