Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As

András Kovács; Takeshi Kasama; J. Sadowski; T. Dietl; Rafal E. Dunin-Borkowski

doi:10.1088/1742-6596/326/1/012018

Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As

András Kovács, Takeshi Kasama, J. Sadowski, T. Dietl, Rafal E. Dunin-Borkowski

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.

Original language	English
Book series	Journal of Physics: Conference Series
Volume	326
Issue number	1
Pages (from-to)	012018
ISSN	1742-6588
DOIs	https://doi.org/10.1088/1742-6596/326/1/012018
Publication status	Published - 2011
Event	17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom Duration: 4 Apr 2011 → 7 Apr 2011 Conference number: 17

Conference

Conference	17th International Conference on Microscopy of Semiconducting Materials
Number	17
Location	University of Cambridge
Country/Territory	United Kingdom
City	Cambridge
Period	04/04/2011 → 07/04/2011

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10.1088/1742-6596/326/1/012018

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title = "Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As",

abstract = "Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.",

author = "Andr{\'a}s Kov{\'a}cs and Takeshi Kasama and J. Sadowski and T. Dietl and Dunin-Borkowski, {Rafal E.}",

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AU - Kovács, András

AU - Kasama, Takeshi

AU - Sadowski, J.

AU - Dietl, T.

AU - Dunin-Borkowski, Rafal E.

N1 - Conference code: 17

PY - 2011

Y1 - 2011

N2 - Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.

AB - Aberration-corrected transmission electron microscopy is used to study voids and nano-crystalline MnAs and As phases formed during the annealing of Mn-doped GaAs. The effects of defocus and inner annular dark-field detector semi-angle on contrast of the nanocrystals are discussed.

U2 - 10.1088/1742-6596/326/1/012018

DO - 10.1088/1742-6596/326/1/012018

M3 - Conference article

SN - 1742-6588

VL - 326

SP - 012018

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

T2 - 17th International Conference on Microscopy of Semiconducting Materials

Y2 - 4 April 2011 through 7 April 2011

ER -

Aberration-corrected electron microscopy of MnAs and As nanocrystals and voids in annealed (Ga,Mn)As

Abstract

Conference

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