A variable probe pitch micro-Hall effect method

Maria-Louise Witthøft*, Frederik W. Østerberg, Janusz Bogdanowicz, Rong Lin, Henrik H. Henrichsen, Ole Hansen, Dirch Hjorth Petersen

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.
    Original languageEnglish
    JournalBeilstein Journal of Nanotechnology
    Volume9
    Pages (from-to)2032-2039
    ISSN2190-4286
    DOIs
    Publication statusPublished - 2018

    Keywords

    • Four-point probes
    • Hall effect
    • Metrology
    • Mobility
    • Variable Probe Pitch

    Cite this

    Witthøft, M-L., Østerberg, F. W., Bogdanowicz, J., Lin, R., Henrichsen, H. H., Hansen, O., & Petersen, D. H. (2018). A variable probe pitch micro-Hall effect method. Beilstein Journal of Nanotechnology, 9, 2032-2039. https://doi.org/10.3762/bjnano.9.192
    Witthøft, Maria-Louise ; Østerberg, Frederik W. ; Bogdanowicz, Janusz ; Lin, Rong ; Henrichsen, Henrik H. ; Hansen, Ole ; Petersen, Dirch Hjorth. / A variable probe pitch micro-Hall effect method. In: Beilstein Journal of Nanotechnology. 2018 ; Vol. 9. pp. 2032-2039.
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    title = "A variable probe pitch micro-Hall effect method",
    abstract = "Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.",
    keywords = "Four-point probes, Hall effect, Metrology, Mobility, Variable Probe Pitch",
    author = "Maria-Louise Witth{\o}ft and {\O}sterberg, {Frederik W.} and Janusz Bogdanowicz and Rong Lin and Henrichsen, {Henrik H.} and Ole Hansen and Petersen, {Dirch Hjorth}",
    year = "2018",
    doi = "10.3762/bjnano.9.192",
    language = "English",
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    Witthøft, M-L, Østerberg, FW, Bogdanowicz, J, Lin, R, Henrichsen, HH, Hansen, O & Petersen, DH 2018, 'A variable probe pitch micro-Hall effect method', Beilstein Journal of Nanotechnology, vol. 9, pp. 2032-2039. https://doi.org/10.3762/bjnano.9.192

    A variable probe pitch micro-Hall effect method. / Witthøft, Maria-Louise; Østerberg, Frederik W.; Bogdanowicz, Janusz; Lin, Rong; Henrichsen, Henrik H.; Hansen, Ole; Petersen, Dirch Hjorth.

    In: Beilstein Journal of Nanotechnology, Vol. 9, 2018, p. 2032-2039.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - A variable probe pitch micro-Hall effect method

    AU - Witthøft, Maria-Louise

    AU - Østerberg, Frederik W.

    AU - Bogdanowicz, Janusz

    AU - Lin, Rong

    AU - Henrichsen, Henrik H.

    AU - Hansen, Ole

    AU - Petersen, Dirch Hjorth

    PY - 2018

    Y1 - 2018

    N2 - Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.

    AB - Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.

    KW - Four-point probes

    KW - Hall effect

    KW - Metrology

    KW - Mobility

    KW - Variable Probe Pitch

    U2 - 10.3762/bjnano.9.192

    DO - 10.3762/bjnano.9.192

    M3 - Journal article

    VL - 9

    SP - 2032

    EP - 2039

    JO - Beilstein Journal of Nanotechnology

    JF - Beilstein Journal of Nanotechnology

    SN - 2190-4286

    ER -

    Witthøft M-L, Østerberg FW, Bogdanowicz J, Lin R, Henrichsen HH, Hansen O et al. A variable probe pitch micro-Hall effect method. Beilstein Journal of Nanotechnology. 2018;9:2032-2039. https://doi.org/10.3762/bjnano.9.192