A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

Yecun Wu, Stefan Ringe, Chun-Lan Wu, Wei Chen, Ankun Yang, Hao Chen, Michael Tang, Guangmin Zhou, Harold Y. Hwang, Karen Chan*, Yi Cui

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 1013 cm-2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS2 were investigated as model reactions. Our theoretical and experimental results show that the overpotential at 10 mA/cm2 and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.
Original languageEnglish
JournalNano letters
Volume19
Issue number10
Pages (from-to)7293-7300
Number of pages8
ISSN1530-6984
DOIs
Publication statusPublished - 2019

Keywords

  • Catalysis transistor
  • Solid-state ion gating
  • Electrocatalysis
  • Two-dimensional materials

Cite this

Wu, Yecun ; Ringe, Stefan ; Wu, Chun-Lan ; Chen, Wei ; Yang, Ankun ; Chen, Hao ; Tang, Michael ; Zhou, Guangmin ; Hwang, Harold Y. ; Chan, Karen ; Cui, Yi. / A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA). In: Nano letters. 2019 ; Vol. 19, No. 10. pp. 7293-7300.
@article{0ca77df832e2474296b8c0e84503841e,
title = "A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)",
abstract = "A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 1013 cm-2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS2 were investigated as model reactions. Our theoretical and experimental results show that the overpotential at 10 mA/cm2 and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.",
keywords = "Catalysis transistor, Solid-state ion gating, Electrocatalysis, Two-dimensional materials",
author = "Yecun Wu and Stefan Ringe and Chun-Lan Wu and Wei Chen and Ankun Yang and Hao Chen and Michael Tang and Guangmin Zhou and Hwang, {Harold Y.} and Karen Chan and Yi Cui",
year = "2019",
doi = "10.1021/acs.nanolett.9b02888",
language = "English",
volume = "19",
pages = "7293--7300",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "10",

}

Wu, Y, Ringe, S, Wu, C-L, Chen, W, Yang, A, Chen, H, Tang, M, Zhou, G, Hwang, HY, Chan, K & Cui, Y 2019, 'A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)', Nano letters, vol. 19, no. 10, pp. 7293-7300. https://doi.org/10.1021/acs.nanolett.9b02888

A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA). / Wu, Yecun; Ringe, Stefan; Wu, Chun-Lan; Chen, Wei; Yang, Ankun; Chen, Hao; Tang, Michael; Zhou, Guangmin; Hwang, Harold Y.; Chan, Karen; Cui, Yi.

In: Nano letters, Vol. 19, No. 10, 2019, p. 7293-7300.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

AU - Wu, Yecun

AU - Ringe, Stefan

AU - Wu, Chun-Lan

AU - Chen, Wei

AU - Yang, Ankun

AU - Chen, Hao

AU - Tang, Michael

AU - Zhou, Guangmin

AU - Hwang, Harold Y.

AU - Chan, Karen

AU - Cui, Yi

PY - 2019

Y1 - 2019

N2 - A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 1013 cm-2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS2 were investigated as model reactions. Our theoretical and experimental results show that the overpotential at 10 mA/cm2 and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.

AB - A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 1013 cm-2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS2 were investigated as model reactions. Our theoretical and experimental results show that the overpotential at 10 mA/cm2 and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.

KW - Catalysis transistor

KW - Solid-state ion gating

KW - Electrocatalysis

KW - Two-dimensional materials

U2 - 10.1021/acs.nanolett.9b02888

DO - 10.1021/acs.nanolett.9b02888

M3 - Journal article

VL - 19

SP - 7293

EP - 7300

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 10

ER -