A toroidal inductor integrated in a standard CMOS process

Luca Vandi, Pietro Andreani, Enrico Temporiti, Enrico Sacchi, Ivan Bietti, Cesare Ghezzi, Rinaldo Castello

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple PI model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz. No self-resonance is observed within the measurement range.
Original languageEnglish
JournalAnalog Integrated Circuits and Signal Processing
Volume50
Issue number1
Pages (from-to)39-46
ISSN0925-1030
DOIs
Publication statusPublished - 2007

Keywords

  • RF
  • passive
  • coil
  • CMOS

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