A toroidal inductor integrated in a standard CMOS process

Luca Vandi, Pietro Andreani, Enrico Temporiti, Enrico Sacchi, Ivan Bietti, Cesare Ghezzi, Rinaldo Castello

    Research output: Contribution to journalJournal articleResearchpeer-review


    This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device. A very simple PI model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz. No self-resonance is observed within the measurement range.
    Original languageEnglish
    JournalAnalog Integrated Circuits and Signal Processing
    Issue number1
    Pages (from-to)39-46
    Publication statusPublished - 2007


    • RF
    • passive
    • coil
    • CMOS


    Dive into the research topics of 'A toroidal inductor integrated in a standard CMOS process'. Together they form a unique fingerprint.

    Cite this