A theoretical derivation of the transients related to partial discharges in ellipsoidal voids

George C Crichton, A. Karlsson, Aage Pedersen

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    Abstract

    Transients associated with partial discharges in ellipsoidal and spheroidal voids are derived in terms of the induced charges on the electrode. The relationship between the induced charge and the properties which are usually measured are discussed. Formulas are obtained from which conclusions can be drawn about the effects of the gas within the void as well as the size, shape, and location of voids. The method is illustrated by applying it to a spheroidal void in a simple disk-type gas-insulated-substation (GIS) spacer. It is found that the nonattaching gas generates an induced charge that is approximately an order of magnitude larger than that generated by the attaching gas. Inception voltages, however, are higher in the latter case by a factor of about 1.5 to 3. The induced charge is therefore proportional to the inverse of the distance from the axis of the electrode system to the center of the void
    Original languageEnglish
    JournalI E E E International Symposium on Electrical Insulation. Conference Record
    Pages (from-to)238-241
    ISSN0164-2006
    DOIs
    Publication statusPublished - 1988
    Event1988 IEEE International Symposium on Electrical Insulation - Boston, MA, United States
    Duration: 5 Jun 19888 Jun 1988
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=746

    Conference

    Conference1988 IEEE International Symposium on Electrical Insulation
    Country/TerritoryUnited States
    CityBoston, MA
    Period05/06/198808/06/1988
    Internet address

    Bibliographical note

    Copyright: 1988 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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