A static current sharing method for paralleled SiC MOSFETs

Xingyu Liu, Mingxing Du, Jinliang Yin, Ziwei Ouyang

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

In high current applications such as photovoltaic power generation or wind power generation,due to the static unbalanced current resulting from the mismatch between the power source parasitic inductances and that between the drain parasitic inductances respectively,a static current sharing method for paralleled SiC MOSFETs is proposed in this paper. This paper analyses and solves the problem of the dynamic unbalanced current resulting from the mismatched threshold voltage firstly. And then the problem of the dynamic unbalanced current caused by the mismatched source parasitic inductance is solved on the basis above. Finally,the problem of the static unbalanced current caused by the mismatched drain parasitic inductance is solved on the basis that there is no the dynamic unbalanced current caused by the mismatched threshold voltage and the mismatched source parasitic inductance. The effectiveness of the static current sharing method proposed in this paper is verified by experiments.
Original languageEnglish
JournalTaiyangneng Xuebao/Acta Energiae Solaris Sinica
Volume44
Issue number7
Pages (from-to)147-154
ISSN0254-0096
DOIs
Publication statusPublished - 2023

Keywords

  • Current sharing
  • Dynamic analysis
  • Parasitic inductance
  • Silicon carbide
  • Static analysis

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