A Small-Area Self-Biased Wideband CMOS Balun LNA with Noise Cancelling and Gain Enhancement

Erik Bruun, Pietro Andreani, J. R. Custódio, J. Goes, J. P. Oliveira, L. B. Oliveira

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.
Original languageEnglish
Title of host publicationProceedings 28. Norchip Conference
Place of PublicationTampere, Finland
Publication date2010
Publication statusPublished - 2010
Event28th Norchip Conference - Tampere, Finland
Duration: 15 Nov 201016 Nov 2010

Conference

Conference28th Norchip Conference
CountryFinland
CityTampere
Period15/11/201016/11/2010

Keywords

  • Inverter based amplifiers
  • Area
  • Noise canceling
  • CMOS
  • Wideband Balun LNA
  • LNAs
  • Self-Biased

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