Abstract
In this paper we present a low-power and small-area
balun LNA. The proposed inverter-based topology uses selfbiasing
and noise cancelling, yielding a very robust LNA with a
low NF. Comparing this circuit with a conventional inverterbased
circuit, we obtain a ∼3 dB enhancement in voltage gain,
with improved robustness against PVT variations. Simulations
results in a 130 nm CMOS technology show a 17.7dB voltage
gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an
NF of approximately 4dB. The total power consumption is below
7.5 mW, with a very small die area of 0.007 mm2. All data are
extracted from post-layout simulations.
Original language | English |
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Title of host publication | Proceedings 28. Norchip Conference |
Place of Publication | Tampere, Finland |
Publication date | 2010 |
Publication status | Published - 2010 |
Event | 28th Norchip Conference - Tampere, Finland Duration: 15 Nov 2010 → 16 Nov 2010 |
Conference
Conference | 28th Norchip Conference |
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Country | Finland |
City | Tampere |
Period | 15/11/2010 → 16/11/2010 |
Keywords
- Inverter based amplifiers
- Area
- Noise canceling
- CMOS
- Wideband Balun LNA
- LNAs
- Self-Biased