A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

Henrik A. Nilsson; Tim Duty; Simon Abay; Chris Wilson; Jakob Birkedal Wagner; Claes Thelander; Per Delsing; Lars Samuelson

doi:10.1021/nl0731062

A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

Henrik A. Nilsson, Tim Duty, Simon Abay, Chris Wilson, Jakob Birkedal Wagner, Claes Thelander, Per Delsing, Lars Samuelson

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 µerms Hz−1/2. At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 µerms Hz−1/2 at 10 Hz.

Original language	English
Journal	Nano Letters
Volume	8
Issue number	3
Pages (from-to)	872-875
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl0731062
Publication status	Published - 2008

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title = "A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire",

abstract = "We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 µerms Hz−1/2. At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 µerms Hz−1/2 at 10 Hz.",

author = "Nilsson, {Henrik A.} and Tim Duty and Simon Abay and Chris Wilson and Wagner, {Jakob Birkedal} and Claes Thelander and Per Delsing and Lars Samuelson",

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T1 - A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

AU - Nilsson, Henrik A.

AU - Duty, Tim

AU - Abay, Simon

AU - Wilson, Chris

AU - Wagner, Jakob Birkedal

AU - Thelander, Claes

AU - Delsing, Per

AU - Samuelson, Lars

PY - 2008

Y1 - 2008

N2 - We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 µerms Hz−1/2. At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 µerms Hz−1/2 at 10 Hz.

AB - We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 µerms Hz−1/2. At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 µerms Hz−1/2 at 10 Hz.

U2 - 10.1021/nl0731062

DO - 10.1021/nl0731062

M3 - Journal article

C2 - 18302328

VL - 8

SP - 872

EP - 875

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 3

ER -

A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

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