A power converter embodied in a semiconductor substrate member

Yasser A. A Nour (Inventor), Hoà Lê Thanh (Inventor)

Research output: Patent

19 Downloads (Pure)

Abstract

A power converter, such as a DC-DC converter or a power amplifier, embodied on a semiconductor substrate member (101), comprising: a first region (102) with a passive electrical component (104) with a first electrically conductive layer pattern (105) of an electrically conductive material and a second electrically conductive layer pattern (106) of an electrically conductive material deposited on respective sides (107, 108) of the semiconductor substrate member; wherein a trench (109) or through-hole (110) is formed (by etching) in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern (105)and the second conductive layer pattern (106); and a second region (103) with an active semiconductor component (111) integrated with the semiconductor substrate (101) by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.

Original languageEnglish
IPCH01L 49/ 02 A I
Patent numberWO2019155056
Filing date11/02/2018
CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
Priority date11/02/2018
Priority numberEP20180000124
Publication statusPublished - 15 Aug 2019

Cite this

Nour, Y. A. A., & Lê Thanh, H. (2019). IPC No. H01L 49/ 02 A I. A power converter embodied in a semiconductor substrate member. (Patent No. WO2019155056).
Nour, Yasser A. A (Inventor) ; Lê Thanh, Hoà (Inventor). / A power converter embodied in a semiconductor substrate member. IPC No.: H01L 49/ 02 A I. Patent No.: WO2019155056. Feb 11, 2018.
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Nour, YAA & Lê Thanh, H Feb. 11 2018, A power converter embodied in a semiconductor substrate member, Patent No. WO2019155056, IPC No. H01L 49/ 02 A I.

A power converter embodied in a semiconductor substrate member. / Nour, Yasser A. A (Inventor); Lê Thanh, Hoà (Inventor).

IPC No.: H01L 49/ 02 A I. Patent No.: WO2019155056. Feb 11, 2018.

Research output: Patent

TY - PAT

T1 - A power converter embodied in a semiconductor substrate member

AU - Nour, Yasser A. A

AU - Lê Thanh, Hoà

PY - 2019/8/15

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N2 - A power converter, such as a DC-DC converter or a power amplifier, embodied on a semiconductor substrate member (101), comprising: a first region (102) with a passive electrical component (104) with a first electrically conductive layer pattern (105) of an electrically conductive material and a second electrically conductive layer pattern (106) of an electrically conductive material deposited on respective sides (107, 108) of the semiconductor substrate member; wherein a trench (109) or through-hole (110) is formed (by etching) in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern (105)and the second conductive layer pattern (106); and a second region (103) with an active semiconductor component (111) integrated with the semiconductor substrate (101) by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.

AB - A power converter, such as a DC-DC converter or a power amplifier, embodied on a semiconductor substrate member (101), comprising: a first region (102) with a passive electrical component (104) with a first electrically conductive layer pattern (105) of an electrically conductive material and a second electrically conductive layer pattern (106) of an electrically conductive material deposited on respective sides (107, 108) of the semiconductor substrate member; wherein a trench (109) or through-hole (110) is formed (by etching) in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern (105)and the second conductive layer pattern (106); and a second region (103) with an active semiconductor component (111) integrated with the semiconductor substrate (101) by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.

M3 - Patent

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Y2 - 2018/02/11

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Nour YAA, Lê Thanh H, inventors. A power converter embodied in a semiconductor substrate member. H01L 49/ 02 A I. 2019 Aug 15.