A physical based equivalent circuit modeling approach for ballasted InP DHBT multi-finger devices at millimeter-wave frequencies

Virginio Midili, Michele Squartecchia, Tom Keinicke Johansen, V. Nodjiadjim, M. Riet, J. Y. Dupuy, A. Konczykowska

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency behavior of the device. This paper presents two distinct modeling approaches: one based on EM simulations and one based on a physical equivalent circuit description. In the first approach, the EM simulations of contact pads and ballasting network are combined with the small-signal model of the intrinsic device. In the second approach, the ballasting network is modeled with lumped components derived from physical analysis of the layout and then combined with EM simulated contact pads and with the device model. The models are validated against S-parameters measurements of real devices up to 65 GHz showing good agreement in terms of maximum available gain. In addition, a MAG of 2–4 dB at 170 GHz shows that ballasted devices can be employed for power amplifiers in D band.
Original languageEnglish
Title of host publication2016 Compound Semiconductor Week
Number of pages2
Publication date2016
ISBN (Print)9781509019649
Publication statusPublished - 2016
Event2016 Compound Semiconductor Week - Toyama, Japan
Duration: 26 Jun 201630 Jun 2016


Conference2016 Compound Semiconductor Week


  • S-parameters
  • equivalent circuits
  • millimetre wave bipolar transistors
  • resistors
  • semiconductor device models
  • InP
  • physical based equivalent circuit modeling
  • ballasted DHBT multifinger devices
  • millimeter-wave frequencies
  • ballasting resistor
  • power capability
  • high frequency behavior
  • EM simulations
  • ballasting network
  • small-signal model
  • intrinsic device
  • lumped components
  • physical analysis
  • EM simulated contact pads
  • S-parameters measurements
  • power amplifiers
  • D band
  • frequency 170 GHz
  • Electronic ballasts
  • Integrated circuit modeling
  • DH-HEMTs
  • Resistors
  • Power amplifiers
  • Metals
  • Indium phosphide
  • millimeter-wave
  • equivalent circuit modeling
  • InP DHBT
  • Solid-state microwave circuits and devices
  • Semiconductor device modelling, equivalent circuits, design and testing
  • Bipolar transistors


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