A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

Rasmus Schandorph Michaelsen, Tom Keinicke Johansen, Kjeld Tamborg, Vitaliy Zhurbenko

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    Abstract

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compression point above 12 dBm. The conversion gain at the center frequency of 8.5 GHz is -9.8 dB with an LO drive level of 15 dBm. The mixer is very broadband with 3 dB bandwidth from 7-12 GHz covering the entire X-band. The LO-IF and RF-IF isolation is better than 46 dB and 36 dB, respectively, in the entire band of operation.
    Original languageEnglish
    Title of host publicationProceedings of the 8th European Microwave Integrated Circuits Conference
    PublisherIEEE
    Publication date2013
    Pages188-191
    ISBN (Print)978-2-87487-032-3
    Publication statusPublished - 2013
    Event8th European Microwave Integrated Circuit Conference - Nuremberg, Germany
    Duration: 7 Oct 20138 Oct 2013
    Conference number: 8
    https://ieeexplore.ieee.org/xpl/conhome/6679727/proceeding

    Conference

    Conference8th European Microwave Integrated Circuit Conference
    Number8
    Country/TerritoryGermany
    CityNuremberg
    Period07/10/201308/10/2013
    Internet address

    Keywords

    • Mixer
    • MMIC
    • Double balanced
    • Passive devices

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