A Novel SFG Structure for C-T Highpass Filters

Ivan Riis Nielsen

A Novel SFG Structure for C-T Highpass Filters

Ivan Riis Nielsen

Technical University of Denmark

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Abstract

This paper presents the design of a sixth order elliptic highpass filter having a passband frequency of 3.0KHz, a passband ripple of 1.0dB and a stopband attenuation of 50dB. The filter is based on a novel integrator based SFG describing a passive prototype filter; this SFG is simulated using MOSFET-C building blocks. The noise performance is considerably enhanced when compared to other highpass filter structures. Well within the stopband the output noise is dominated by amplifier noise, but only one amplifier contributes and its equivalent input noise is simply copied to the output (not amplified). Around the passband frequency MOSFET-resistor noise is the dominant noise source, but the number of MOSFET-resistors is kept at a minimum, thus reducing this noise source. The above mentioned noise properties are directly related to the new filter structure, which in addition to this has the advantage of being quite simple when compared to other integrator based highpass filter structures.

Original language	English
Title of host publication	Proceedings of the Eighteenth European Solid-State Circuits Conference
Publisher	IEEE
Publication date	1992
Pages	79-82
ISBN (Print)	87-98-42320-7
Publication status	Published - 1992
Event	18th European Solid-State Circuits Conference - Copenhagen, Denmark Duration: 21 Sept 1992 → 23 Sept 1992 Conference number: 18 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5468103

Conference

Conference	18th European Solid-State Circuits Conference
Number	18
Country/Territory	Denmark
City	Copenhagen
Period	21/09/1992 → 23/09/1992
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5468103

Bibliographical note

Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{76dc5ee77fd24dbf8fef4aa300b2ac96,

title = "A Novel SFG Structure for C-T Highpass Filters",

abstract = "This paper presents the design of a sixth order elliptic highpass filter having a passband frequency of 3.0KHz, a passband ripple of 1.0dB and a stopband attenuation of 50dB. The filter is based on a novel integrator based SFG describing a passive prototype filter; this SFG is simulated using MOSFET-C building blocks. The noise performance is considerably enhanced when compared to other highpass filter structures. Well within the stopband the output noise is dominated by amplifier noise, but only one amplifier contributes and its equivalent input noise is simply copied to the output (not amplified). Around the passband frequency MOSFET-resistor noise is the dominant noise source, but the number of MOSFET-resistors is kept at a minimum, thus reducing this noise source. The above mentioned noise properties are directly related to the new filter structure, which in addition to this has the advantage of being quite simple when compared to other integrator based highpass filter structures.",

author = "Nielsen, \{Ivan Riis\}",

note = "Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 18th European Solid-State Circuits Conference, ESSCIRC '92 ; Conference date: 21-09-1992 Through 23-09-1992",

year = "1992",

language = "English",

isbn = "87-98-42320-7",

pages = "79--82",

booktitle = "Proceedings of the Eighteenth European Solid-State Circuits Conference",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5468103",

}

TY - GEN

T1 - A Novel SFG Structure for C-T Highpass Filters

AU - Nielsen, Ivan Riis

N1 - Conference code: 18

PY - 1992

Y1 - 1992

N2 - This paper presents the design of a sixth order elliptic highpass filter having a passband frequency of 3.0KHz, a passband ripple of 1.0dB and a stopband attenuation of 50dB. The filter is based on a novel integrator based SFG describing a passive prototype filter; this SFG is simulated using MOSFET-C building blocks. The noise performance is considerably enhanced when compared to other highpass filter structures. Well within the stopband the output noise is dominated by amplifier noise, but only one amplifier contributes and its equivalent input noise is simply copied to the output (not amplified). Around the passband frequency MOSFET-resistor noise is the dominant noise source, but the number of MOSFET-resistors is kept at a minimum, thus reducing this noise source. The above mentioned noise properties are directly related to the new filter structure, which in addition to this has the advantage of being quite simple when compared to other integrator based highpass filter structures.

AB - This paper presents the design of a sixth order elliptic highpass filter having a passband frequency of 3.0KHz, a passband ripple of 1.0dB and a stopband attenuation of 50dB. The filter is based on a novel integrator based SFG describing a passive prototype filter; this SFG is simulated using MOSFET-C building blocks. The noise performance is considerably enhanced when compared to other highpass filter structures. Well within the stopband the output noise is dominated by amplifier noise, but only one amplifier contributes and its equivalent input noise is simply copied to the output (not amplified). Around the passband frequency MOSFET-resistor noise is the dominant noise source, but the number of MOSFET-resistors is kept at a minimum, thus reducing this noise source. The above mentioned noise properties are directly related to the new filter structure, which in addition to this has the advantage of being quite simple when compared to other integrator based highpass filter structures.

M3 - Article in proceedings

SN - 87-98-42320-7

SP - 79

EP - 82

BT - Proceedings of the Eighteenth European Solid-State Circuits Conference

PB - IEEE

T2 - 18th European Solid-State Circuits Conference

Y2 - 21 September 1992 through 23 September 1992

ER -

A Novel SFG Structure for C-T Highpass Filters

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