A Novel SFG Structure for C-T Highpass Filters

Ivan Riis Nielsen

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Abstract

This paper presents the design of a sixth order elliptic highpass filter having a passband frequency of 3.0KHz, a passband ripple of 1.0dB and a stopband attenuation of 50dB. The filter is based on a novel integrator based SFG describing a passive prototype filter; this SFG is simulated using MOSFET-C building blocks. The noise performance is considerably enhanced when compared to other highpass filter structures. Well within the stopband the output noise is dominated by amplifier noise, but only one amplifier contributes and its equivalent input noise is simply copied to the output (not amplified). Around the passband frequency MOSFET-resistor noise is the dominant noise source, but the number of MOSFET-resistors is kept at a minimum, thus reducing this noise source. The above mentioned noise properties are directly related to the new filter structure, which in addition to this has the advantage of being quite simple when compared to other integrator based highpass filter structures.
Original languageEnglish
Title of host publicationProceedings of the Eighteenth European Solid-State Circuits Conference
PublisherIEEE
Publication date1992
Pages79-82
ISBN (Print)87-98-42320-7
Publication statusPublished - 1992
Event18th European Solid-State Circuits Conference - Copenhagen, Denmark
Duration: 21 Sep 199223 Sep 1992
Conference number: 18
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=5468103

Conference

Conference18th European Solid-State Circuits Conference
Number18
CountryDenmark
CityCopenhagen
Period21/09/199223/09/1992
Internet address

Bibliographical note

Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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