A Novel SFG Structure for C-T Highpass Filters

Ivan Riis Nielsen

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    This paper presents the design of a sixth order elliptic highpass filter having a passband frequency of 3.0KHz, a passband ripple of 1.0dB and a stopband attenuation of 50dB. The filter is based on a novel integrator based SFG describing a passive prototype filter; this SFG is simulated using MOSFET-C building blocks. The noise performance is considerably enhanced when compared to other highpass filter structures. Well within the stopband the output noise is dominated by amplifier noise, but only one amplifier contributes and its equivalent input noise is simply copied to the output (not amplified). Around the passband frequency MOSFET-resistor noise is the dominant noise source, but the number of MOSFET-resistors is kept at a minimum, thus reducing this noise source. The above mentioned noise properties are directly related to the new filter structure, which in addition to this has the advantage of being quite simple when compared to other integrator based highpass filter structures.
    Original languageEnglish
    Title of host publicationProceedings of the Eighteenth European Solid-State Circuits Conference
    Publication date1992
    ISBN (Print)87-98-42320-7
    Publication statusPublished - 1992
    Event18th European Solid-State Circuits Conference - Copenhagen, Denmark
    Duration: 21 Sept 199223 Sept 1992
    Conference number: 18


    Conference18th European Solid-State Circuits Conference
    Internet address

    Bibliographical note

    Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE


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