A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-parameters

Tom Keinicke Johansen; Viktor Krozer; Dzenan Hadziabdic; Chenhui Jiang; Agnieszka Konczykowska; Jean-Yves Dupuy

doi:10.1109/APMC.2007.4555014

A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-parameters

Tom Keinicke Johansen
, Viktor Krozer
, Dzenan Hadziabdic
, Chenhui Jiang
, Agnieszka Konczykowska
, Jean-Yves Dupuy

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.

Original language	English
Title of host publication	Asia-Pacific Microwave Conference, 2007. APMC 2007.
Volume	1-5
Publisher	IEEE
Publication date	2007
Pages	1927-1930
ISBN (Print)	978-1-4244-0748-4
DOIs	https://doi.org/10.1109/APMC.2007.4555014
Publication status	Published - 2007
Event	Asia Pacific Microwave Conference 2007 - Bangkok, Thailand Duration: 11 Dec 2007 → 14 Dec 2007

Conference

Conference	Asia Pacific Microwave Conference 2007
Country/Territory	Thailand
City	Bangkok
Period	11/12/2007 → 14/12/2007

Bibliographical note

Copyright: 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-parameters",

abstract = "In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.",

author = "Johansen, \{Tom Keinicke\} and Viktor Krozer and Dzenan Hadziabdic and Chenhui Jiang and Agnieszka Konczykowska and Jean-Yves Dupuy",

note = "Copyright: 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; Asia Pacific Microwave Conference 2007, APMC'07 ; Conference date: 11-12-2007 Through 14-12-2007",

year = "2007",

doi = "10.1109/APMC.2007.4555014",

language = "English",

isbn = "978-1-4244-0748-4",

volume = "1-5",

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booktitle = "Asia-Pacific Microwave Conference, 2007. APMC 2007.",

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T1 - A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-parameters

AU - Johansen, Tom Keinicke

AU - Krozer, Viktor

AU - Hadziabdic, Dzenan

AU - Jiang, Chenhui

AU - Konczykowska, Agnieszka

AU - Dupuy, Jean-Yves

N1 - Copyright: 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2007

Y1 - 2007

N2 - In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.

AB - In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.

U2 - 10.1109/APMC.2007.4555014

DO - 10.1109/APMC.2007.4555014

M3 - Article in proceedings

SN - 978-1-4244-0748-4

VL - 1-5

SP - 1927

EP - 1930

BT - Asia-Pacific Microwave Conference, 2007. APMC 2007.

PB - IEEE

T2 - Asia Pacific Microwave Conference 2007

Y2 - 11 December 2007 through 14 December 2007

ER -

A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-parameters

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