In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.
|Title of host publication||Asia-Pacific Microwave Conference, 2007. APMC 2007.|
|Publication status||Published - 2007|
|Event||Asia Pacific Microwave Conference 2007 - Bangkok, Thailand|
Duration: 11 Dec 2007 → 14 Dec 2007
|Conference||Asia Pacific Microwave Conference 2007|
|Period||11/12/2007 → 14/12/2007|