A novel growth mode of alkane films on a SiO2 surface

H. Mo; H. Taub; U.G. Volkmann; M. Pino; S.N. Ehrlich; Flemming Yssing Hansen; E. Lu; P. Miceli

A novel growth mode of alkane films on a SiO2 surface

H. Mo, H. Taub, U.G. Volkmann, M. Pino, S.N. Ehrlich, Flemming Yssing Hansen, E. Lu, P. Miceli

Department of Chemistry

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found previously for shorter alkanes deposited from the vapor phase onto solid surfaces.

Original language	English
Journal	Chemical Physics Letters
Volume	377
Issue number	1-2
Pages (from-to)	99-105
ISSN	0009-2614
Publication status	Published - 2003

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title = "A novel growth mode of alkane films on a SiO2 surface",

abstract = "Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found previously for shorter alkanes deposited from the vapor phase onto solid surfaces.",

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pages = "99--105",

journal = "Chemical Physics Letters",

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TY - JOUR

T1 - A novel growth mode of alkane films on a SiO2 surface

AU - Mo, H.

AU - Taub, H.

AU - Volkmann, U.G.

AU - Pino, M.

AU - Ehrlich, S.N.

AU - Hansen, Flemming Yssing

AU - Lu, E.

AU - Miceli, P.

PY - 2003

Y1 - 2003

N2 - Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found previously for shorter alkanes deposited from the vapor phase onto solid surfaces.

AB - Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found previously for shorter alkanes deposited from the vapor phase onto solid surfaces.

M3 - Journal article

SN - 0009-2614

VL - 377

SP - 99

EP - 105

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-2

ER -

A novel growth mode of alkane films on a SiO2 surface

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