Abstract
Most of the commercial white light-emitting diode (LED) light sources are made from phosphor coated blue-emitting gallium nitride (GaN) chips. This type white LED light source always has tradeoff between luminous efficacy and color rendering index (CRI). Furthermore, yellow-emitting phosphor decays much faster than the semiconductor chip, so the white color will turn into bluish over the time. This paper will propose a new type white LED light source: using fluorescent silicon carbide (SiC) to take the place of phosphor. This new type LED has the following advantages: a) SiC is a wide bandgap semiconductor material , so it is stable; b) Fluorescent SiC has very wide emission spectrum, and it could generate white light with very high CRI; c) It is a better substrate than sapphire for the GaN growth in terms of lattice match and thermal conductivity. This paper will cover: the growth of fluorescent SiC, its optical characterization, nanostructuring of the SiC surface for extraction efficiency enhancement, and surface passivation for further efficiency enhancement.
Original language | English |
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Publication date | 2015 |
Publication status | Published - 2015 |
Event | SSLCHINA 2015 - Shenzhen Convention & Exhibition Center, Shenzhen, China Duration: 2 Nov 2015 → 4 Nov 2015 |
Conference
Conference | SSLCHINA 2015 |
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Location | Shenzhen Convention & Exhibition Center |
Country/Territory | China |
City | Shenzhen |
Period | 02/11/2015 → 04/11/2015 |