A new type of white light-emitting diode light source basing on fluorescent SiC

Haiyan Ou (Invited author), Yiyu Ou (Invited author), Weifang Lu (Invited author), Ahmed Fadil (Invited author), Aikaterini Argyraki (Invited author), Michl Kaiser (Invited author), Peter Wellmann (Invited author), Valdas Jokubavicius (Invited author), Mikael Syväjärvi (Invited author)

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

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Abstract

Most of the commercial white light-emitting diode (LED) light sources are made from phosphor coated blue-emitting gallium nitride (GaN) chips. This type white LED light source always has tradeoff between luminous efficacy and color rendering index (CRI). Furthermore, yellow-emitting phosphor decays much faster than the semiconductor chip, so the white color will turn into bluish over the time. This paper will propose a new type white LED light source: using fluorescent silicon carbide (SiC) to take the place of phosphor. This new type LED has the following advantages: a) SiC is a wide bandgap semiconductor material , so it is stable; b) Fluorescent SiC has very wide emission spectrum, and it could generate white light with very high CRI; c) It is a better substrate than sapphire for the GaN growth in terms of lattice match and thermal conductivity. This paper will cover: the growth of fluorescent SiC, its optical characterization, nanostructuring of the SiC surface for extraction efficiency enhancement, and surface passivation for further efficiency enhancement.
Original languageEnglish
Publication date2015
Publication statusPublished - 2015
EventSSLCHINA 2015 - Shenzhen Convention & Exhibition Center, Shenzhen, China
Duration: 2 Nov 20154 Nov 2015

Conference

ConferenceSSLCHINA 2015
LocationShenzhen Convention & Exhibition Center
CountryChina
CityShenzhen
Period02/11/201504/11/2015

Bibliographical note

SSLCHINA 2015November 2-4, 2015 Shenzhen Convention & Exhibition Center, China, Invited

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