A new type of white LED light source by bonding fluorescent SiC and a near-UV LED

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Fluorescent silicon carbide (f-SiC) has advantages over phosphors in terms of abundancy, long lifespan, good thermal conductivity and high color rendering index [1, 2]. In this paper, we demonstrate a prototype of fluorescent SiC hybridly integrated with a near UV LED. The fabrication and characterization of the prototype are introduced and the future perspectives are foreseen. The bonding process of an NUV LED and a B-N co-doped f-SiC epi-layer is shown in Fig.1. HSQ layers are spun on both the 4H-SiC substrate of the NUV LED and the polished backside of the free-standing f-SiC epi-layer. Afterwards, the NUV LED and the f-SiC epi-layer are placed with the surfaces covered by the HSQ layers in contact. During bonding at 400 °C, HSQ is converted into solid SiOx and by doing so the two samples are bonded together.
Original languageEnglish
Publication date2018
Number of pages2
Publication statusPublished - 2018
Event6th international workshop on wide bandgap Semiconductor materials and devices - Pingtan, China
Duration: 29 Oct 201831 Oct 2018


Conference6th international workshop on wide bandgap Semiconductor materials and devices

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