Abstract
Fluorescent silicon carbide (f-SiC) has advantages over phosphors in terms of abundancy, long lifespan, good thermal conductivity and high color rendering index [1, 2]. In this paper, we demonstrate a prototype of fluorescent SiC hybridly integrated with a near UV LED. The fabrication and characterization of the prototype are introduced and the future perspectives are foreseen. The bonding process of an NUV LED and a B-N co-doped f-SiC epi-layer is shown in Fig.1. HSQ layers are spun on both the 4H-SiC substrate of the NUV LED and the polished backside of the free-standing f-SiC epi-layer. Afterwards, the NUV LED and the f-SiC epi-layer are placed with the surfaces covered by the HSQ layers in contact. During bonding at 400 °C, HSQ is converted into solid SiOx and by doing so the two samples are bonded together.
| Original language | English |
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| Publication date | 2018 |
| Number of pages | 2 |
| Publication status | Published - 2018 |
| Event | 6th international workshop on wide bandgap Semiconductor materials and devices - Pingtan, China Duration: 29 Oct 2018 → 31 Oct 2018 |
Conference
| Conference | 6th international workshop on wide bandgap Semiconductor materials and devices |
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| Country/Territory | China |
| City | Pingtan |
| Period | 29/10/2018 → 31/10/2018 |