A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

H. Kepa; T. Giebultowicz; B. Buras; Bente Lebech; K. Clausen

doi:10.1088/0031-8949/25/6A/040

A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

H. Kepa, T. Giebultowicz, B. Buras, Bente Lebech, K. Clausen

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Abstract

The dispersion relations for the acoustic and optic phonons in HgTe and for the acoustic phonons in HgSe were determined by neutron inelastic scattering in three high symmetry directions. The effect of the free-carrier screening of the long-range electric field of LO phonons in HgTe was observed. The formalism of the rigid ion model is used for numerical calculations of the phonon dispersion relations and the phonon densities of states in HgTe and HgSe.

Original language	English
Journal	Physica Scripta. Topical Issues
Volume	25
Issue number	6
Pages (from-to)	807-809
ISSN	0281-1847
DOIs	https://doi.org/10.1088/0031-8949/25/6A/040
Publication status	Published - 1982

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title = "A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe",

abstract = "The dispersion relations for the acoustic and optic phonons in HgTe and for the acoustic phonons in HgSe were determined by neutron inelastic scattering in three high symmetry directions. The effect of the free-carrier screening of the long-range electric field of LO phonons in HgTe was observed. The formalism of the rigid ion model is used for numerical calculations of the phonon dispersion relations and the phonon densities of states in HgTe and HgSe.",

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T1 - A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

AU - Kepa, H.

AU - Giebultowicz, T.

AU - Buras, B.

AU - Lebech, Bente

AU - Clausen, K.

PY - 1982

Y1 - 1982

N2 - The dispersion relations for the acoustic and optic phonons in HgTe and for the acoustic phonons in HgSe were determined by neutron inelastic scattering in three high symmetry directions. The effect of the free-carrier screening of the long-range electric field of LO phonons in HgTe was observed. The formalism of the rigid ion model is used for numerical calculations of the phonon dispersion relations and the phonon densities of states in HgTe and HgSe.

AB - The dispersion relations for the acoustic and optic phonons in HgTe and for the acoustic phonons in HgSe were determined by neutron inelastic scattering in three high symmetry directions. The effect of the free-carrier screening of the long-range electric field of LO phonons in HgTe was observed. The formalism of the rigid ion model is used for numerical calculations of the phonon dispersion relations and the phonon densities of states in HgTe and HgSe.

U2 - 10.1088/0031-8949/25/6A/040

DO - 10.1088/0031-8949/25/6A/040

M3 - Journal article

SN - 0281-1847

VL - 25

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EP - 809

JO - Physica Scripta. Topical Issues

JF - Physica Scripta. Topical Issues

IS - 6

ER -

A Neutron Scattering Study of Lattice Dynamics of HgTe and HgSe

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