A model for the interpretation of holographic and Lorentz images of tilted reverse-biased p-n junctions in a finite specimen

Marco Beleggia, R. Capelli, G. Pozzi

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

An analytical model for the electric field associated with a periodic array of alternating p- and n-doped stripes lying in a half-plane, tilted with respect to the specimen edges and thus better representing the actual experimental set-up is presented. With respect to a previous treatment, relative to the case of stripes perpendicular to the edge, a more physical derivation is outlined, and the calculated phase shift is used to interpret the main features of holography and Lorentz microscopy images, allowing a quantitative assessment of the influence of the specimen edge on them
Original languageEnglish
JournalPhilosophical Magazine
Volume80
Issue number5
Pages (from-to)1071-1082
Number of pages12
ISSN1478-6435
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event1st International Workshop on Semiconducting and Superconducting Materials - Turin, Italy
Duration: 17 Feb 199918 Feb 1999
Conference number: 1

Workshop

Workshop1st International Workshop on Semiconducting and Superconducting Materials
Number1
CountryItaly
CityTurin
Period17/02/199918/02/1999

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