A method to monitor IGBT module bond wire failure using on-state voltage separation strategy

Qingyi Kong, Mingxing Du*, Ziwei Ouyang, Kexin Wei, William Gerard Hurley

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (I c ) and junction temperature (T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

Original languageEnglish
Article number1791
JournalEnergies
Volume12
Issue number9
Number of pages13
ISSN1996-1073
DOIs
Publication statusPublished - 11 May 2019

Keywords

  • Bond wire failure
  • Insulated gate bipolar transistor (IGBT) module
  • On-state voltage
  • Separation strategy

Cite this

Kong, Qingyi ; Du, Mingxing ; Ouyang, Ziwei ; Wei, Kexin ; Hurley, William Gerard. / A method to monitor IGBT module bond wire failure using on-state voltage separation strategy. In: Energies. 2019 ; Vol. 12, No. 9.
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title = "A method to monitor IGBT module bond wire failure using on-state voltage separation strategy",
abstract = "On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (I c ) and junction temperature (T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.",
keywords = "Bond wire failure, Insulated gate bipolar transistor (IGBT) module, On-state voltage, Separation strategy",
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A method to monitor IGBT module bond wire failure using on-state voltage separation strategy. / Kong, Qingyi; Du, Mingxing; Ouyang, Ziwei; Wei, Kexin; Hurley, William Gerard.

In: Energies, Vol. 12, No. 9, 1791, 11.05.2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - A method to monitor IGBT module bond wire failure using on-state voltage separation strategy

AU - Kong, Qingyi

AU - Du, Mingxing

AU - Ouyang, Ziwei

AU - Wei, Kexin

AU - Hurley, William Gerard

PY - 2019/5/11

Y1 - 2019/5/11

N2 - On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (I c ) and junction temperature (T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

AB - On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (I c ) and junction temperature (T j ). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

KW - Bond wire failure

KW - Insulated gate bipolar transistor (IGBT) module

KW - On-state voltage

KW - Separation strategy

U2 - 10.3390/en12091791

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JO - Energies

JF - Energies

SN - 1996-1073

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