A method for manufacturing a hollow mems structure

Anpan Han (Inventor), Hoà Lê Thanh (Inventor), Karen Birkelund (Inventor), Anders Michael Jørgensen (Inventor), Flemming Jensen, (Inventor)

    Research output: Patent

    247 Downloads (Pure)

    Abstract

    The present invention relates to a method for manufacturing an at least partly hollow MEMS structure. In a first step one or more through-going openings is/are provided in core material. The one or more through-going openings is/are then covered by an etch-stop layer. After this step, a bottom electrically conducting layer, one or more electrically conducting vias and a top electrically conducting layer are created. The bottom layer is connected to the vias and vias are connected to the top layer. The vias are formed by filling at least one of the one or more through-going openings. The method further comprises the step of creating bottom and top conductors in the respective bottom and top layers. Finally, excess core material is removed in order to create the at least partly hollow MEMS structure which may include a MEMS inductor.

    Original languageEnglish
    IPCH01F 17/ 00 A I
    Patent numberWO2017108218
    Filing date29/06/2017
    CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
    Priority date23/12/2015
    Priority numberEP20150202490
    Publication statusPublished - 29 Jun 2017

    Cite this

    Han, A., Thanh, H. L., Birkelund, K., Jørgensen, A. M., & Jensen, F. (2017). IPC No. H01F 17/ 00 A I. A method for manufacturing a hollow mems structure. (Patent No. WO2017108218).