Abstract
The present disclosure details a magnetron plasma sputtering arrangement (3, 4) comprising an evacuable chamber (10); where, in the evacuable chamber (10), a tuning electrode (40), operatively connected to a biasing source (42) with respect to ground (12c), and comprising an aperture (41) defining at least one axis of length (Φ), is arranged in a flow path for plasma between a sputtering head (20) and a substrate (31), such that a plasma sputtered material originating at a sputtering target (22) will traverse the aperture (41) before depositing onto the surface (32) of the substrate (31) as a thin film.
| Original language | English |
|---|---|
| IPC | C23C 14/ 35 A I |
| Patent number | WO2021053115 |
| Filing date | 17/09/2020 |
| Country/Territory | International Bureau of the World Intellectual Property Organization (WIPO) |
| Priority date | 18/09/2019 |
| Priority number | DK2019PA70572 |
| Publication status | Published - 25 Mar 2021 |