A magnetron plasma sputtering arrangement

Eugen Stamate (Inventor)

Research output: Patent

47 Downloads (Pure)

Abstract

The present disclosure details a magnetron plasma sputtering arrangement (3, 4) comprising an evacuable chamber (10); where, in the evacuable chamber (10), a tuning electrode (40), operatively connected to a biasing source (42) with respect to ground (12c), and comprising an aperture (41) defining at least one axis of length (Φ), is arranged in a flow path for plasma between a sputtering head (20) and a substrate (31), such that a plasma sputtered material originating at a sputtering target (22) will traverse the aperture (41) before depositing onto the surface (32) of the substrate (31) as a thin film.

Original languageEnglish
IPCC23C 14/ 35 A I
Patent numberWO2021053115
Filing date17/09/2020
Country/TerritoryInternational Bureau of the World Intellectual Property Organization (WIPO)
Priority date18/09/2019
Priority numberDK2019PA70572
Publication statusPublished - 25 Mar 2021

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