A linear electrooptic effect in silicon, induced by use of strain

Jacob Fage-Pedersen (Invited author), Lars Hagedorn Frandsen (Invited author), Andrei Lavrinenko (Invited author), Peter Ingo Borel (Invited author)

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Abstract

The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.
Original languageEnglish
Title of host publication2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM.
PublisherIEEE/LEOS
Publication date2006
Pages37-39
ISBN (Print)14-24-40096-1
DOIs
Publication statusPublished - 2006
EventIEEE/LEOS International Conference on Group IV Photonics - - Ottawa, Canada
Duration: 1 Jan 2006 → …
Conference number: 3rd

Conference

ConferenceIEEE/LEOS International Conference on Group IV Photonics -
Number3rd
CityOttawa, Canada
Period01/01/2006 → …

Bibliographical note

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Cite this

Fage-Pedersen, J., Frandsen, L. H., Lavrinenko, A., & Borel, P. I. (2006). A linear electrooptic effect in silicon, induced by use of strain. In 2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM. (pp. 37-39). IEEE/LEOS. https://doi.org/10.1109/GROUP4.2006.1708157