A linear electrooptic effect in silicon, induced by use of strain

Jacob Fage-Pedersen; Lars Hagedorn Frandsen; Andrei Lavrinenko; Peter Ingo Borel

doi:10.1109/GROUP4.2006.1708157

A linear electrooptic effect in silicon, induced by use of strain

Jacob Fage-Pedersen (Invited author), Lars Hagedorn Frandsen (Invited author), Andrei Lavrinenko (Invited author), Peter Ingo Borel (Invited author)

Center for Nanoteknologi

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.

Original language	English
Title of host publication	2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM.
Publisher	IEEE/LEOS
Publication date	2006
Pages	37-39
ISBN (Print)	14-24-40096-1
DOIs	https://doi.org/10.1109/GROUP4.2006.1708157
Publication status	Published - 2006
Event	2006 3rd IEEE International Conference on Group IV Photonics - Ottawa, Canada Duration: 13 Sept 2006 → 15 Sept 2006 Conference number: 3 https://ieeexplore.ieee.org/xpl/conhome/11193/proceeding

Conference

Conference	2006 3rd IEEE International Conference on Group IV Photonics
Number	3
Country/Territory	Canada
City	Ottawa
Period	13/09/2006 → 15/09/2006
Internet address	https://ieeexplore.ieee.org/xpl/conhome/11193/proceeding

Bibliographical note

Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{bbc883e1a14e462181b8116e19699ee5,

title = "A linear electrooptic effect in silicon, induced by use of strain",

abstract = "The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.",

author = "Jacob Fage-Pedersen and Frandsen, {Lars Hagedorn} and Andrei Lavrinenko and Borel, {Peter Ingo}",

note = "Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 2006 3rd IEEE International Conference on Group IV Photonics ; Conference date: 13-09-2006 Through 15-09-2006",

year = "2006",

doi = "10.1109/GROUP4.2006.1708157",

language = "English",

isbn = "14-24-40096-1",

pages = "37--39",

booktitle = "2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM.",

publisher = "IEEE/LEOS",

url = "https://ieeexplore.ieee.org/xpl/conhome/11193/proceeding",

}

Fage-Pedersen, J, Frandsen, LH, Lavrinenko, A & Borel, PI 2006, A linear electrooptic effect in silicon, induced by use of strain. in 2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM.. IEEE/LEOS, pp. 37-39, 2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, Ontario, Canada, 13/09/2006. https://doi.org/10.1109/GROUP4.2006.1708157

A linear electrooptic effect in silicon, induced by use of strain. / Fage-Pedersen, Jacob (Invited author); Frandsen, Lars Hagedorn (Invited author); Lavrinenko, Andrei (Invited author) et al.
2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM.. IEEE/LEOS, 2006. p. 37-39.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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T1 - A linear electrooptic effect in silicon, induced by use of strain

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AU - Frandsen, Lars Hagedorn

AU - Lavrinenko, Andrei

AU - Borel, Peter Ingo

N1 - Conference code: 3

PY - 2006

Y1 - 2006

N2 - The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.

AB - The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.

U2 - 10.1109/GROUP4.2006.1708157

DO - 10.1109/GROUP4.2006.1708157

M3 - Article in proceedings

SN - 14-24-40096-1

SP - 37

EP - 39

BT - 2006 3rd IEEE/LEOS International Conference on Group IV Photonics - Proceedings CD-ROM.

PB - IEEE/LEOS

T2 - 2006 3rd IEEE International Conference on Group IV Photonics

Y2 - 13 September 2006 through 15 September 2006

ER -

A linear electrooptic effect in silicon, induced by use of strain

Abstract

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