A Highly Linear Single-Balanced Resistive X-band MMIC Mixer in GaN HEMT Technology

Tom K. Johansen, Frank Schnieder, Bernd Janke, Olof Bengtsson, Andreas Wentzel, Wolfgang Heinrich

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper a highly linear X-band MMIC mixer implemented in a 0.25μm GaN HEMT technology is presented. The mixer is based on a single-balanced resistive architecture using a pair of symmetrical 4×125μm GaN HEMTs. A novel minituarized half-wavelength hair-pin type of balun creates the balanced LO signal to be fed to the gates. A lumped-element diplexer network is used to separate the IF and RF signals at the drains. The fabricated MMIC mixer demonstrates a 6.9 dB conversion loss at 10 GHz with an LO power of +24.6 dBm and a bandwidth from 7.8−12.2GHz. Over the same bandwidth the single-tone second and third-order spurious responses are below -66 dBm and -98 dBm, respectively, at an RF input power level of -10 dBm. The experimental results furthermore show that the two-tone third-order input intercept point (IIP3) reaches ∼30 dBm at an applied LO power of +24.6dBm.
Original languageEnglish
Title of host publication2024 25th International Microwave and Radar Conference (MIKON)
PublisherIEEE
Publication date2024
Pages22-25
ISBN (Electronic)978-83-969726-1-3
DOIs
Publication statusPublished - 2024
Event25th International Microwave and Radar Conference - Wroclaw, Poland
Duration: 1 Jul 20244 Jul 2024

Conference

Conference25th International Microwave and Radar Conference
Country/TerritoryPoland
City Wroclaw
Period01/07/202404/07/2024
SeriesInternational Conference on Microwave Radar and Wireless Communications
ISSN2995-0570

Keywords

  • Galium nitride (GaN)
  • Linearity
  • Monolithic microwave integrated circuit (MMIC)
  • Mixers

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