@inproceedings{d80639eb6c284906acb8431db6987fe0,
title = "A Highly Linear Single-Balanced Resistive X-band MMIC Mixer in GaN HEMT Technology",
abstract = "In this paper a highly linear X-band MMIC mixer implemented in a 0.25μm GaN HEMT technology is presented. The mixer is based on a single-balanced resistive architecture using a pair of symmetrical 4×125μm GaN HEMTs. A novel minituarized half-wavelength hair-pin type of balun creates the balanced LO signal to be fed to the gates. A lumped-element diplexer network is used to separate the IF and RF signals at the drains. The fabricated MMIC mixer demonstrates a 6.9 dB conversion loss at 10 GHz with an LO power of +24.6 dBm and a bandwidth from 7.8−12.2GHz. Over the same bandwidth the single-tone second and third-order spurious responses are below -66 dBm and -98 dBm, respectively, at an RF input power level of -10 dBm. The experimental results furthermore show that the two-tone third-order input intercept point (IIP3) reaches ∼30 dBm at an applied LO power of +24.6dBm.",
keywords = "Galium nitride (GaN), Linearity, Monolithic microwave integrated circuit (MMIC), Mixers",
author = "Johansen, {Tom K.} and Frank Schnieder and Bernd Janke and Olof Bengtsson and Andreas Wentzel and Wolfgang Heinrich",
year = "2024",
doi = "10.23919/MIKON60251.2024.10633931",
language = "English",
series = "International Conference on Microwave Radar and Wireless Communications",
publisher = "IEEE",
pages = "22--25",
booktitle = "2024 25th International Microwave and Radar Conference (MIKON)",
address = "United States",
note = "25th International Microwave and Radar Conference, MIKON2024 ; Conference date: 01-07-2024 Through 04-07-2024",
}