A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology

Andreas Wentzel; Hady Yacoub; Tom K. Johansen; Wolfgang Heinrich; Viktor Krozer

doi:10.23919/EuMIC54520.2022.9923551

A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology

Andreas Wentzel^*, Hady Yacoub, Tom K. Johansen, Wolfgang Heinrich, Viktor Krozer

^*Corresponding author for this work

Ferdinand-Braun-Institut

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents a highly-efficient on-chip W-band single-diode rectifier for energy recovery in 6G transmitters and wireless power transfer applications. For the first time a W-band rectifier has been fabricated on an InP HBT process. The circuit consists of a 2 x (0.85 x 6 μm²) series p-n diode as the core rectification element and a big shunted capacitor. No input matching has been applied. At 108 GHz the rectifier achieves a measured record power conversion efficiency (PCE) of 69% for - 1.5 dBm RF input power (RFin). The PCE reaches 14 % for RFin of about 15 dBm with 5 mW of DC output power. The chip shows a very compact size with 360 x 260 μm² including pads.

Original language	English
Title of host publication	Proceedings of the 17th European Microwave Integrated Circuits Conference (EuMIC)
Publisher	IEEE
Publication date	2022
Pages	208-211
ISBN (Print)	978-2-87487-070-5
DOIs	https://doi.org/10.23919/EuMIC54520.2022.9923551
Publication status	Published - 2022
Event	17th European Microwave Integrated Circuits Conference (EuMIC) - Milan, Italy Duration: 26 Sept 2022 → 27 Sept 2022

Conference

Conference	17th European Microwave Integrated Circuits Conference (EuMIC)
Country/Territory	Italy
City	Milan
Period	26/09/2022 → 27/09/2022

Keywords

Rectifier
W-band
Energy recovery
InP
Triple mesa
Power conversion
Power transfer

Access to Document

10.23919/EuMIC54520.2022.9923551

OpenUrl availability

Full text

Cite this

@inproceedings{6c163083dc444d05b875cae62e2f7537,

title = "A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology",

abstract = "This paper presents a highly-efficient on-chip W-band single-diode rectifier for energy recovery in 6G transmitters and wireless power transfer applications. For the first time a W-band rectifier has been fabricated on an InP HBT process. The circuit consists of a 2 x (0.85 x 6 μm2) series p-n diode as the core rectification element and a big shunted capacitor. No input matching has been applied. At 108 GHz the rectifier achieves a measured record power conversion efficiency (PCE) of 69% for - 1.5 dBm RF input power (RFin). The PCE reaches 14 % for RFin of about 15 dBm with 5 mW of DC output power. The chip shows a very compact size with 360 x 260 μm2 including pads.",

keywords = "Rectifier, W-band, Energy recovery, InP, Triple mesa, Power conversion, Power transfer",

author = "Andreas Wentzel and Hady Yacoub and Johansen, {Tom K.} and Wolfgang Heinrich and Viktor Krozer",

year = "2022",

doi = "10.23919/EuMIC54520.2022.9923551",

language = "English",

isbn = "978-2-87487-070-5",

pages = "208--211",

booktitle = "Proceedings of the 17th European Microwave Integrated Circuits Conference (EuMIC)",

publisher = "IEEE",

address = "United States",

note = " 17th European Microwave Integrated Circuits Conference (EuMIC) ; Conference date: 26-09-2022 Through 27-09-2022",

}

Wentzel, A, Yacoub, H, Johansen, TK, Heinrich, W & Krozer, V 2022, A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology. in Proceedings of the 17th European Microwave Integrated Circuits Conference (EuMIC). IEEE, pp. 208-211, 17th European Microwave Integrated Circuits Conference (EuMIC), Milan, Italy, 26/09/2022. https://doi.org/10.23919/EuMIC54520.2022.9923551

TY - GEN

T1 - A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology

AU - Wentzel, Andreas

AU - Yacoub, Hady

AU - Johansen, Tom K.

AU - Heinrich, Wolfgang

AU - Krozer, Viktor

PY - 2022

Y1 - 2022

N2 - This paper presents a highly-efficient on-chip W-band single-diode rectifier for energy recovery in 6G transmitters and wireless power transfer applications. For the first time a W-band rectifier has been fabricated on an InP HBT process. The circuit consists of a 2 x (0.85 x 6 μm2) series p-n diode as the core rectification element and a big shunted capacitor. No input matching has been applied. At 108 GHz the rectifier achieves a measured record power conversion efficiency (PCE) of 69% for - 1.5 dBm RF input power (RFin). The PCE reaches 14 % for RFin of about 15 dBm with 5 mW of DC output power. The chip shows a very compact size with 360 x 260 μm2 including pads.

AB - This paper presents a highly-efficient on-chip W-band single-diode rectifier for energy recovery in 6G transmitters and wireless power transfer applications. For the first time a W-band rectifier has been fabricated on an InP HBT process. The circuit consists of a 2 x (0.85 x 6 μm2) series p-n diode as the core rectification element and a big shunted capacitor. No input matching has been applied. At 108 GHz the rectifier achieves a measured record power conversion efficiency (PCE) of 69% for - 1.5 dBm RF input power (RFin). The PCE reaches 14 % for RFin of about 15 dBm with 5 mW of DC output power. The chip shows a very compact size with 360 x 260 μm2 including pads.

KW - Rectifier

KW - W-band

KW - Energy recovery

KW - InP

KW - Triple mesa

KW - Power conversion

KW - Power transfer

U2 - 10.23919/EuMIC54520.2022.9923551

DO - 10.23919/EuMIC54520.2022.9923551

M3 - Article in proceedings

SN - 978-2-87487-070-5

SP - 208

EP - 211

BT - Proceedings of the 17th European Microwave Integrated Circuits Conference (EuMIC)

PB - IEEE

T2 - 17th European Microwave Integrated Circuits Conference (EuMIC)

Y2 - 26 September 2022 through 27 September 2022

ER -

A Highly Efficient W-Band Rectifier MMIC in InP HBT Technology

Abstract

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this