A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers

Lin Fan*, Arnold Knott, Ivan Harald Holger Jørgensen

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

    948 Downloads (Pure)

    Abstract

    Previous research on switched-capacitor DC-DC converters has focused on low-voltage and/or high-power ranges where the efficiencies are dominated by conduction loss. Switched-capacitor DC-DC converters at high-voltage (> 100 V) low-power (< 10 W) levels with high efficiency and high power density are anticipated to emerge. This paper presents a switched-capacitor converter with an input voltage up to 380 V (compatible with rectified European mains) and a maximum output power of 10 W. GaN switches and SiC diodes are analytically compared and actively combined to properly address the challenges at high-voltage low-current levels, where switching loss becomes significant. Further trade-off between conduction loss and switching loss is experimentally optimized with switching frequencies. Three variant designs of the proposed converter are implemented, and the trade-off between the efficiency and the power density is validated with measurement results. A peak efficiency of 98.6% and a power density of 7.5 W/cm3 are achieved without heatsink or airflow.The characteristic impedance level of the switched-capacitor converter is an order of magnitude higher than previously published ones. The converter is intended for LED drivers.
    Original languageEnglish
    JournalElektronika ir Elektrotechnika
    Volume24
    Issue number3
    Pages (from-to)33-40
    Number of pages8
    ISSN1392-1215
    DOIs
    Publication statusPublished - 2018

    Keywords

    • DC-DC power converters
    • Gallium nitride
    • Silicon carbide
    • Switched capacitor circuits
    • Wide band gap semiconductors

    Fingerprint

    Dive into the research topics of 'A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers'. Together they form a unique fingerprint.

    Cite this