A High Power Boost Converter for PV Systems Operating up to 300 kHz using SiC Devices.

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Abstract

In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally-on SiC JFET and a SiC diode is used. The SiC JFET has been evaluated on an optimized double pulse test circuit showing switching energies four times lower than its Si IGBT competitor. Measurements show a maximum efficiency of 98.6% at 50 kHz. Thermal investigations show that the boost converter can be operated at full power for a switching frequency of 100 kHz using natural cooling. At 200 kHz the boost converter is capable of operating at full power when forced air cooling is applied having a JFET case temperature of less than 90 C. The case temperature of the JFET increases up to 110 C at a switching frequency of 300 kHz where a maximum efficiency of 97.5% is achieved.
Original languageEnglish
Title of host publicationProceedings of IEEE International Power Electronics and Application Conference and Exposition
PublisherIEEE
Publication date2014
Pages302 - 307
ISBN (Print)978-1-4799-6768-1
Publication statusPublished - 2014
EventIEEE International Power Electronics and Application Conference and Exposition - Holiday Inn Shanghai Pudong Kangqiao, Shanghai, China
Duration: 5 Nov 20148 Nov 2014

Conference

ConferenceIEEE International Power Electronics and Application Conference and Exposition
LocationHoliday Inn Shanghai Pudong Kangqiao
CountryChina
CityShanghai
Period05/11/201408/11/2014

Keywords

  • Boost converter
  • SiC JFET
  • SiC diode
  • Photovoltaic

Cite this

Anthon, A., Zhang, Z., & Andersen, M. A. E. (2014). A High Power Boost Converter for PV Systems Operating up to 300 kHz using SiC Devices. In Proceedings of IEEE International Power Electronics and Application Conference and Exposition (pp. 302 - 307). IEEE.