In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally-on SiC JFET and a SiC diode is used. The SiC JFET has been evaluated on an optimized double pulse test circuit showing switching energies four times lower than its Si IGBT competitor. Measurements show a maximum efficiency of 98.6% at 50 kHz. Thermal investigations show that the boost converter can be operated at full power for a switching frequency of 100 kHz using natural cooling. At 200 kHz the boost converter is capable of operating at full power when forced air cooling is applied having a JFET case temperature of less than 90 C. The case temperature of the JFET increases up to 110 C at a switching frequency of 300 kHz where a maximum efficiency of 97.5% is achieved.
|Title of host publication||Proceedings of IEEE International Power Electronics and Application Conference and Exposition|
|Pages||302 - 307|
|Publication status||Published - 2014|
|Event||IEEE International Power Electronics and Application Conference and Exposition - Holiday Inn Shanghai Pudong Kangqiao, Shanghai, China|
Duration: 5 Nov 2014 → 8 Nov 2014
|Conference||IEEE International Power Electronics and Application Conference and Exposition|
|Location||Holiday Inn Shanghai Pudong Kangqiao|
|Period||05/11/2014 → 08/11/2014|
- Boost converter
- SiC JFET
- SiC diode
Anthon, A., Zhang, Z., & Andersen, M. A. E. (2014). A High Power Boost Converter for PV Systems Operating up to 300 kHz using SiC Devices. In Proceedings of IEEE International Power Electronics and Application Conference and Exposition (pp. 302 - 307). IEEE.