Abstract
In this paper, a 3kW boost converter for PV
applications using SiC devices is introduced. Main focus
is to operate the converter over a wide range of switching
frequency and to analyze the main loss distributors as well as
the efficiency. The switching element is a recently introduced
normally-on SiC JFET and a SiC diode is used. The SiC
JFET has been evaluated on an optimized double pulse test
circuit showing switching energies four times lower than
its Si IGBT competitor. Measurements show a maximum
efficiency of 98.6% at 50 kHz. Thermal investigations show
that the boost converter can be operated at full power for
a switching frequency of 100 kHz using natural cooling. At
200 kHz the boost converter is capable of operating at full
power when forced air cooling is applied having a JFET case
temperature of less than 90 C. The case temperature of the
JFET increases up to 110 C at a switching frequency of
300 kHz where a maximum efficiency of 97.5% is achieved.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of IEEE International Power Electronics and Application Conference and Exposition |
| Publisher | IEEE |
| Publication date | 2014 |
| Pages | 302 - 307 |
| ISBN (Print) | 978-1-4799-6768-1 |
| Publication status | Published - 2014 |
| Event | 2014 IEEE International Power Electronics and Application Conference and Exposition - Holiday Inn Shanghai Pudong Kangqiao, Shanghai, China Duration: 5 Nov 2014 → 8 Nov 2014 |
Conference
| Conference | 2014 IEEE International Power Electronics and Application Conference and Exposition |
|---|---|
| Location | Holiday Inn Shanghai Pudong Kangqiao |
| Country/Territory | China |
| City | Shanghai |
| Period | 05/11/2014 → 08/11/2014 |
Keywords
- Boost converter
- SiC JFET
- SiC diode
- Photovoltaic
