A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Yunzhong Chen, Felix Trier, Dennis Valbjørn Christensen, Niels Hessel Andersen, Takeshi Kasama, Wei Zhang, Søren Linderoth, Nini Pryds

Research output: Contribution to conferencePosterResearchpeer-review

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Abstract

The realization of high-mobility 2DEGs in epitaxially grown heterostructures made of traditional semiconductors is at the heart of present electronics, which has led to a wealth of new physical phenomena as well as new electronic and photonic devices over the past few decades. 2DEGs at the interface between insulating complex oxides not only provide a wealth of opportunities to study mesoscopic physics with strongly correlated electrons confined in nanostructures, but also show promise for multifunctional all-oxide devices with probably even richer behavior than those we experienced in semiconductor devices.
Original languageEnglish
Publication date2013
Number of pages1
Publication statusPublished - 2013
Event2nd Frontiers of Microscopy Virtual Conference -
Duration: 24 Apr 201326 Apr 2013

Conference

Conference2nd Frontiers of Microscopy Virtual Conference
Period24/04/201326/04/2013

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