A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Yunzhong Chen; Felix Trier; Dennis Valbjørn Christensen; Niels Hessel Andersen; Takeshi Kasama; Wei Zhang; Søren Linderoth; Nini Pryds

A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al₂O₃/SrTiO₃

Yunzhong Chen, Felix Trier, Dennis Valbjørn Christensen, Niels Hessel Andersen, Takeshi Kasama, Wei Zhang, Søren Linderoth, Nini Pryds

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Abstract

The realization of high-mobility 2DEGs in epitaxially grown heterostructures made of traditional semiconductors is at the heart of present electronics, which has led to a wealth of new physical phenomena as well as new electronic and photonic devices over the past few decades. 2DEGs at the interface between insulating complex oxides not only provide a wealth of opportunities to study mesoscopic physics with strongly correlated electrons confined in nanostructures, but also show promise for multifunctional all-oxide devices with probably even richer behavior than those we experienced in semiconductor devices.

Original language	English
Publication date	2013
Number of pages	1
Publication status	Published - 2013
Event	2nd Frontiers of Microscopy Virtual Conference - Duration: 24 Apr 2013 → 26 Apr 2013

Conference

Conference	2nd Frontiers of Microscopy Virtual Conference
Period	24/04/2013 → 26/04/2013

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High mobility 2DEGs

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title = "A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3 ",

abstract = "The realization of high-mobility 2DEGs in epitaxially grown heterostructures made of traditional semiconductors is at the heart of present electronics, which has led to a wealth of new physical phenomena as well as new electronic and photonic devices over the past few decades. 2DEGs at the interface between insulating complex oxides not only provide a wealth of opportunities to study mesoscopic physics with strongly correlated electrons confined in nanostructures, but also show promise for multifunctional all-oxide devices with probably even richer behavior than those we experienced in semiconductor devices.",

author = "Yunzhong Chen and Felix Trier and Christensen, {Dennis Valbj{\o}rn} and Andersen, {Niels Hessel} and Takeshi Kasama and Wei Zhang and S{\o}ren Linderoth and Nini Pryds",

year = "2013",

language = "English",

note = "2nd Frontiers of Microscopy Virtual Conference ; Conference date: 24-04-2013 Through 26-04-2013",

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T1 - A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

AU - Chen, Yunzhong

AU - Trier, Felix

AU - Christensen, Dennis Valbjørn

AU - Andersen, Niels Hessel

AU - Kasama, Takeshi

AU - Zhang, Wei

AU - Linderoth, Søren

AU - Pryds, Nini

PY - 2013

Y1 - 2013

N2 - The realization of high-mobility 2DEGs in epitaxially grown heterostructures made of traditional semiconductors is at the heart of present electronics, which has led to a wealth of new physical phenomena as well as new electronic and photonic devices over the past few decades. 2DEGs at the interface between insulating complex oxides not only provide a wealth of opportunities to study mesoscopic physics with strongly correlated electrons confined in nanostructures, but also show promise for multifunctional all-oxide devices with probably even richer behavior than those we experienced in semiconductor devices.

AB - The realization of high-mobility 2DEGs in epitaxially grown heterostructures made of traditional semiconductors is at the heart of present electronics, which has led to a wealth of new physical phenomena as well as new electronic and photonic devices over the past few decades. 2DEGs at the interface between insulating complex oxides not only provide a wealth of opportunities to study mesoscopic physics with strongly correlated electrons confined in nanostructures, but also show promise for multifunctional all-oxide devices with probably even richer behavior than those we experienced in semiconductor devices.

M3 - Poster

T2 - 2nd Frontiers of Microscopy Virtual Conference

Y2 - 24 April 2013 through 26 April 2013

ER -