A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Yunzhong Chen, N. Bovet, Felix Trier, Dennis Christensen, F.M. Qu, Niels Hessel Andersen, Takeshi Kasama, Wei Zhang, R. Giraud, J. Dufouleur, T.S. Jespersen, J.R. Sun, Anders Smith, J. Nygård, L. Lu, B. Büchner, B.G. Shen, Søren Linderoth, Nini Pryds

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm2V-1 s-1 (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO3 and a spinel g-Al2O3 epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite twodimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
Original languageEnglish
Article number1371
JournalNature Communications
Volume4
Number of pages6
ISSN2041-1723
DOIs
Publication statusPublished - 2013

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