A describing function approach to bipolar RF-power amplifier simulation

Jens Vidkjær

    Research output: Contribution to journalLetterpeer-review

    409 Downloads (Pure)


    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.
    Original languageEnglish
    JournalIEEE Transactions on Circuits and Systems
    Issue number8
    Pages (from-to)758-767
    Publication statusPublished - 1981

    Bibliographical note

    Copyright 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.


    Dive into the research topics of 'A describing function approach to bipolar RF-power amplifier simulation'. Together they form a unique fingerprint.

    Cite this