A describing function approach to bipolar RF-power amplifier simulation

Jens Vidkjær

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    Abstract

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.
    Original languageEnglish
    JournalIEEE Transactions on Circuits and Systems
    Volume28
    Issue number8
    Pages (from-to)758-767
    ISSN0098-4094
    DOIs
    Publication statusPublished - 1981

    Bibliographical note

    Copyright 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

    Cite this

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    title = "A describing function approach to bipolar RF-power amplifier simulation",
    abstract = "A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.",
    author = "Jens Vidkj{\ae}r",
    note = "Copyright 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",
    year = "1981",
    doi = "10.1109/TCS.1981.1085047",
    language = "English",
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    journal = "IEEE Transactions on Circuits and Systems",
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    A describing function approach to bipolar RF-power amplifier simulation. / Vidkjær, Jens.

    In: IEEE Transactions on Circuits and Systems, Vol. 28, No. 8, 1981, p. 758-767.

    Research output: Contribution to journalLetterResearchpeer-review

    TY - JOUR

    T1 - A describing function approach to bipolar RF-power amplifier simulation

    AU - Vidkjær, Jens

    N1 - Copyright 1981 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

    PY - 1981

    Y1 - 1981

    N2 - A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.

    AB - A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.

    U2 - 10.1109/TCS.1981.1085047

    DO - 10.1109/TCS.1981.1085047

    M3 - Letter

    VL - 28

    SP - 758

    EP - 767

    JO - IEEE Transactions on Circuits and Systems

    JF - IEEE Transactions on Circuits and Systems

    SN - 0098-4094

    IS - 8

    ER -