A describing function approach to bipolar RF-power amplifier simulation

Jens Vidkjær

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    Abstract

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the terminal currents are assumed sinusoidal. The approximation comprises both the input and output properties of the transistor simultaneously and includes the effects of base widening, current saturation, and the most significant thermal dependencies. The method is verified through a series of experiments.
    Original languageEnglish
    JournalIEEE Transactions on Circuits and Systems
    Volume28
    Issue number8
    Pages (from-to)758-767
    ISSN0098-4094
    DOIs
    Publication statusPublished - 1981

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