A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

M. Hossain*, T. Shivan, R. Doerner, S. Seifert, H. Yacoub, T. K. Johansen, W. Heinrich, V. Krozer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5x1.2 mm2. This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.
Original languageEnglish
Title of host publicationProceedings of the 16th European Microwave Integrated Circuits Conference
PublisherIEEE
Publication date2022
Pages237-240
ISBN (Electronic)978-2-87487-064-4
DOIs
Publication statusPublished - 2022
Event16th European Microwave Integrated Circuits Conference - London, United Kingdom
Duration: 13 Feb 202218 Feb 2022

Conference

Conference16th European Microwave Integrated Circuits Conference
Country/TerritoryUnited Kingdom
CityLondon
Period13/02/202218/02/2022

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