A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

M. Hossain; T. Shivan; R. Doerner; S. Seifert; H. Yacoub; T. K. Johansen; W. Heinrich; V. Krozer

doi:10.23919/EuMIC50153.2022.9783677

A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

M. Hossain^*, T. Shivan, R. Doerner, S. Seifert, H. Yacoub, T. K. Johansen, W. Heinrich, V. Krozer

^*Corresponding author for this work

Ferdinand-Braun-Institut

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5x1.2 mm². This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.

Original language	English
Title of host publication	Proceedings of the 16th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2022
Pages	237-240
ISBN (Electronic)	978-2-87487-064-4
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9783677
Publication status	Published - 2022
Event	16^th European Microwave Integrated Circuits Conference - London, United Kingdom Duration: 13 Feb 2022 → 18 Feb 2022

Conference

Conference	16^th European Microwave Integrated Circuits Conference
Country/Territory	United Kingdom
City	London
Period	13/02/2022 → 18/02/2022

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10.23919/EuMIC50153.2022.9783677

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@inproceedings{62ce277ec59546038ea3e695d867381d,

title = "A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology",

abstract = "This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5x1.2 mm2. This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.",

author = "M. Hossain and T. Shivan and R. Doerner and S. Seifert and H. Yacoub and Johansen, {T. K.} and W. Heinrich and V. Krozer",

year = "2022",

doi = "10.23919/EuMIC50153.2022.9783677",

language = "English",

pages = "237--240",

booktitle = "Proceedings of the 16th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "16<sup>th</sup> European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 13-02-2022 Through 18-02-2022",

}

Hossain, M, Shivan, T, Doerner, R, Seifert, S, Yacoub, H, Johansen, TK, Heinrich, W & Krozer, V 2022, A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology. in Proceedings of the 16th European Microwave Integrated Circuits Conference. IEEE, pp. 237-240, 16^th European Microwave Integrated Circuits Conference, London, United Kingdom, 13/02/2022. https://doi.org/10.23919/EuMIC50153.2022.9783677

TY - GEN

T1 - A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

AU - Hossain, M.

AU - Shivan, T.

AU - Doerner, R.

AU - Seifert, S.

AU - Yacoub, H.

AU - Johansen, T. K.

AU - Heinrich, W.

AU - Krozer, V.

PY - 2022

Y1 - 2022

N2 - This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5x1.2 mm2. This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.

AB - This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5x1.2 mm2. This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.

U2 - 10.23919/EuMIC50153.2022.9783677

DO - 10.23919/EuMIC50153.2022.9783677

M3 - Article in proceedings

SP - 237

EP - 240

BT - Proceedings of the 16th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - 16<sup>th</sup> European Microwave Integrated Circuits Conference

Y2 - 13 February 2022 through 18 February 2022

ER -

A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

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