A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors. / Johansen, Tom Keinicke; Rybalko, Oleksandr; Zhurbenko, Vitaliy; Bulcha, Berhanu; Hesler, Jeffrey.

In: International Journal of Microwave and Wireless Technologies, 2018, p. 1-10.

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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@article{c053a85e48b54d219ba22823fc0a695c,
title = "A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors",
abstract = "The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance simulations using the model are used to predict the efficiency of a millimeter-wave balanced doubler from room to cryogenic temperatures. The estimation is verified experimentally using a 188 GHz balanced doubler cooled down to 77 K. The model has been further verified down to 14 K using a 78 GHz balanced doubler.",
keywords = "Semiconductor Devices and IC-Technologies, TeraHertz Technology and Applications",
author = "Johansen, {Tom Keinicke} and Oleksandr Rybalko and Vitaliy Zhurbenko and Berhanu Bulcha and Jeffrey Hesler",
year = "2018",
doi = "10.1017/S1759078717001490",
language = "English",
pages = "1--10",
journal = "International Journal of Microwave and Wireless Technologies",
issn = "1759-0787",
publisher = "Cambridge University Press",

}

RIS

TY - JOUR

T1 - A comprehensive study of cryogenic cooled millimeter-wave frequency multipliers based on GaAs Schottky-barrier varactors

AU - Johansen, Tom Keinicke

AU - Rybalko, Oleksandr

AU - Zhurbenko, Vitaliy

AU - Bulcha, Berhanu

AU - Hesler, Jeffrey

PY - 2018

Y1 - 2018

N2 - The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance simulations using the model are used to predict the efficiency of a millimeter-wave balanced doubler from room to cryogenic temperatures. The estimation is verified experimentally using a 188 GHz balanced doubler cooled down to 77 K. The model has been further verified down to 14 K using a 78 GHz balanced doubler.

AB - The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance simulations using the model are used to predict the efficiency of a millimeter-wave balanced doubler from room to cryogenic temperatures. The estimation is verified experimentally using a 188 GHz balanced doubler cooled down to 77 K. The model has been further verified down to 14 K using a 78 GHz balanced doubler.

KW - Semiconductor Devices and IC-Technologies

KW - TeraHertz Technology and Applications

U2 - 10.1017/S1759078717001490

DO - 10.1017/S1759078717001490

M3 - Journal article

SP - 1

EP - 10

JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

SN - 1759-0787

ER -