A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

Lauge Gammelgaard, Peter Bøggild, J.W. Wells, K. Handrup, Ph. Hofmann, M.B. Balslev, J.E. Hansen, P.R.E Petersen

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    Abstract

    We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small. (C) 2008 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume93
    Issue number9
    Pages (from-to)093104
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2008

    Bibliographical note

    Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • 4-POINT PROBE
    • RESISTANCE MEASUREMENTS

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