A complementary metal-oxide-semiconductor  compatible monocantilever  12-point probe for conductivity  measurements on the nanoscale

Lauge Gammelgaard; Peter Bøggild; J.W. Wells; K. Handrup; Ph. Hofmann; M.B. Balslev; J.E. Hansen; P.R.E Petersen

doi:10.1063/1.2888746

A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

Lauge Gammelgaard, Peter Bøggild, J.W. Wells, K. Handrup, Ph. Hofmann, M.B. Balslev, J.E. Hansen, P.R.E Petersen

Research output: Contribution to journal › Journal article › Research › peer-review

575 Downloads (Pure)

Abstract

We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small. (C) 2008 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	93
Issue number	9
Pages (from-to)	093104
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2888746
Publication status	Published - 2008

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

4-POINT PROBE
RESISTANCE MEASUREMENTS

Access to Document

10.1063/1.2888746

WellsFinal published version, 257 KB

http://link.aip.org/link/APPLAB/v93/i9/p093104/s1

OpenUrl availability

Full text

Cite this

@article{fa8c31bc4f31490e9e21aa338e4446ab,

title = "A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale",

abstract = "We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small. (C) 2008 American Institute of Physics.",

keywords = "4-POINT PROBE, RESISTANCE MEASUREMENTS",

author = "Lauge Gammelgaard and Peter B{\o}ggild and J.W. Wells and K. Handrup and Ph. Hofmann and M.B. Balslev and J.E. Hansen and P.R.E Petersen",

note = "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2008",

doi = "10.1063/1.2888746",

language = "English",

volume = "93",

pages = "093104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - A complementary metal-oxide-semiconductor compatible monocantilever 12-point probe for conductivity measurements on the nanoscale

AU - Gammelgaard, Lauge

AU - Bøggild, Peter

AU - Wells, J.W.

AU - Handrup, K.

AU - Hofmann, Ph.

AU - Balslev, M.B.

AU - Hansen, J.E.

AU - Petersen, P.R.E

N1 - Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2008

Y1 - 2008

N2 - We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small. (C) 2008 American Institute of Physics.

AB - We present a complementary metal-oxide-semiconductor compatible, nanoscale 12-point-probe based on TiW electrodes placed on a SiO2 monocantilever. Probes are mass fabricated on Si wafers by a combination of electron beam and UV lithography, realizing TiW electrode tips with a width down to 250 nm and a probe pitch of 500 nm. In-air four-point measurements have been performed on indium tin oxide, ruthenium, and titanium-tungsten, showing good agreement with values obtained by other four-point probes. In-vacuum four-point resistance measurements have been performed on clean Bi(111) using different probe spacings. The results show the expected behavior for bulk Bi, indicating that the contribution of electronic surface states to the transport properties is very small. (C) 2008 American Institute of Physics.

KW - 4-POINT PROBE

KW - RESISTANCE MEASUREMENTS

U2 - 10.1063/1.2888746

DO - 10.1063/1.2888746

M3 - Journal article

SN - 0003-6951

VL - 93

SP - 093104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -