A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators

J. Riishøj; Torben Nørskov Nielsen; Ulrik Bo Gliese

doi:10.1109/4.315207

A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators

J. Riishøj
, Torben Nørskov Nielsen
, Ulrik Bo Gliese

Technical University of Denmark

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s. A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted

Original language	English
Journal	I E E E Journal of Solid State Circuits
Volume	29
Issue number	10
Pages (from-to)	1277-1281
ISSN	0018-9200
DOIs	https://doi.org/10.1109/4.315207
Publication status	Published - 1994

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Copyright: 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators",

abstract = "The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s. A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted",

author = "J. Riish{\o}j and Nielsen, \{Torben N{\o}rskov\} and Gliese, \{Ulrik Bo\}",

note = "Copyright: 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",

year = "1994",

doi = "10.1109/4.315207",

language = "English",

volume = "29",

pages = "1277--1281",

journal = "I E E E Journal of Solid State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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T1 - A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators

AU - Riishøj, J.

AU - Nielsen, Torben Nørskov

AU - Gliese, Ulrik Bo

N1 - Copyright: 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1994

Y1 - 1994

N2 - The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s. A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted

AB - The design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier (SOA) modulators is presented. The designed IC exhibits eye diagrams with eye openings of better than 0.30 V and a spacing between adjacent output signal levels of 0.33 V for output symbol rates of up to 2 Gsymbol/s corresponding to input bit rates of up to 4 Gb/s. A novel differential super buffer output driver is applied, for which output reflection coefficients |S22| of less than -12 dB for frequencies up to 10 GHz are obtained. A 1 Gb/s optical QPSK microwave link transmission experiment using a packaged sample of the designed IC and a two-electrode semiconductor optical amplifier phase modulator has been conducted

U2 - 10.1109/4.315207

DO - 10.1109/4.315207

M3 - Journal article

SN - 0018-9200

VL - 29

SP - 1277

EP - 1281

JO - I E E E Journal of Solid State Circuits

JF - I E E E Journal of Solid State Circuits

IS - 10

ER -

A 4 Gb/s 2-level to 2 Gsymbol/s 4-level converter GaAs IC for semiconductor optical amplifier QPSK modulators

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