A 315 GHz Source with Integrated Antenna in InP-DHBT Technology

M. Hossain*, Tom K. Johansen, R. Doerner, H. Yacoub, W. Heinrich, V. Krozer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A 315-GHz source with integrated antenna is presented. It consists of a harmonic oscillator and a patch antenna. The harmonic oscillator is realized based on the push-push topology using a 0.8 μm-emitter transferred-substrate (TS) InP-DHBT technology with an fmax of 320 GHz. The harmonic oscillator together with antenna delivers -10 dBm of output power. DC power consumption is only 21 mW from a 1.6-volt power supply, which corresponds to 0.5% overall DC-to-RF efficiency. The chip area of the source with integrated antenna circuit is $0.9\times 0.65$ mm2.
Original languageEnglish
Title of host publicationProceedings of the 17th European Microwave Integrated Circuits Conference (EuMIC)
PublisherIEEE
Publication date2022
Pages232-235
ISBN (Electronic)978-2-87487-070-5
DOIs
Publication statusPublished - 2022
Event 17th European Microwave Integrated Circuits Conference (EuMIC) - Milan, Italy
Duration: 26 Sept 202227 Sept 2022

Conference

Conference 17th European Microwave Integrated Circuits Conference (EuMIC)
Country/TerritoryItaly
CityMilan
Period26/09/202227/09/2022

Keywords

  • InP double heterojunction bipolar transistor (DHBT)
  • Monolithic microwave integrated circuit (MMIC)
  • Oscillators
  • Sub-terahertz (THz)
  • Transferred-s ubstrate (TS)

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