A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

Arsen Turhaner; Maruf Hossain; Mohamed Brahem; Tom K. Johansen

doi:10.23919/EuMIC50153.2022.9784095

A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

Arsen Turhaner, Maruf Hossain, Mohamed Brahem, Tom K. Johansen

Leibniz-Institut für Höchstfrequenztechnik

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ~7% for transistor based sources in this frequency range.

Original language	English
Title of host publication	Proceedings of 16^th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2022
Pages	269-272
ISBN (Print)	978-1-6654-4722-5
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9784095
Publication status	Published - 2022
Event	16^th European Microwave Integrated Circuits Conference - London, United Kingdom Duration: 13 Feb 2022 → 18 Feb 2022

Conference

Conference	16^th European Microwave Integrated Circuits Conference
Country/Territory	United Kingdom
City	London
Period	13/02/2022 → 18/02/2022

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10.23919/EuMIC50153.2022.9784095

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title = "A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology",

abstract = "A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of \textasciitilde{}7\% for transistor based sources in this frequency range.",

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AB - A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ~7% for transistor based sources in this frequency range.

U2 - 10.23919/EuMIC50153.2022.9784095

DO - 10.23919/EuMIC50153.2022.9784095

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BT - Proceedings of 16th European Microwave Integrated Circuits Conference

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Y2 - 13 February 2022 through 18 February 2022

ER -

A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

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