A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

Arsen Turhaner; Maruf Hossain; Mohamed Brahem; Tom K. Johansen

doi:10.23919/EuMIC50153.2022.9784095

A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

Arsen Turhaner, Maruf Hossain, Mohamed Brahem, Tom K. Johansen

Leibniz-Institut für Höchstfrequenztechnik

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ~7% for transistor based sources in this frequency range.

Original language	English
Title of host publication	Proceedings of 16^th European Microwave Integrated Circuits Conference
Publisher	IEEE
Publication date	2022
Pages	269-272
ISBN (Print)	978-1-6654-4722-5
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9784095
Publication status	Published - 2022
Event	16^th European Microwave Integrated Circuits Conference - London, United Kingdom Duration: 13 Feb 2022 → 18 Feb 2022

Conference

Conference	16^th European Microwave Integrated Circuits Conference
Country/Territory	United Kingdom
City	London
Period	13/02/2022 → 18/02/2022

Access to Document

10.23919/EuMIC50153.2022.9784095

OpenUrl availability

Full text

Cite this

@inproceedings{d6cda1ef6bbf47548cff85e8b3968ae5,

title = "A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology",

abstract = "A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ~7% for transistor based sources in this frequency range.",

author = "Arsen Turhaner and Maruf Hossain and Mohamed Brahem and Johansen, {Tom K.}",

year = "2022",

doi = "10.23919/EuMIC50153.2022.9784095",

language = "English",

isbn = "978-1-6654-4722-5",

pages = "269--272",

booktitle = "Proceedings of 16th European Microwave Integrated Circuits Conference",

publisher = "IEEE",

address = "United States",

note = "16<sup>th</sup> European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 13-02-2022 Through 18-02-2022",

}

TY - GEN

T1 - A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

AU - Turhaner, Arsen

AU - Hossain, Maruf

AU - Brahem, Mohamed

AU - Johansen, Tom K.

PY - 2022

Y1 - 2022

N2 - A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ~7% for transistor based sources in this frequency range.

AB - A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ~7% for transistor based sources in this frequency range.

U2 - 10.23919/EuMIC50153.2022.9784095

DO - 10.23919/EuMIC50153.2022.9784095

M3 - Article in proceedings

SN - 978-1-6654-4722-5

SP - 269

EP - 272

BT - Proceedings of 16th European Microwave Integrated Circuits Conference

PB - IEEE

T2 - 16<sup>th</sup> European Microwave Integrated Circuits Conference

Y2 - 13 February 2022 through 18 February 2022

ER -

A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

Abstract

Conference

Access to Document

OpenUrl availability

Fingerprint

Cite this