A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology

Tom Keinicke Johansen, M. Hossain, S. Boppel, R. Doerner, Viktor Krozer, W. Heinrich

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output. Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.
    Original languageEnglish
    Title of host publicationProceedings of the 14th European Microwave Integrated Circuits Conference
    PublisherIEEE
    Publication date2019
    Pages180-183
    ISBN (Print)978-2-87487-056-9
    DOIs
    Publication statusPublished - 2019
    Event14th European Microwave Integrated Circuits Conference - Paris, France
    Duration: 30 Sept 20191 Oct 2019

    Conference

    Conference14th European Microwave Integrated Circuits Conference
    Country/TerritoryFrance
    CityParis
    Period30/09/201901/10/2019

    Keywords

    • Frequency multiplier
    • InP double heterojunction bipolar transistor
    • Millimeter-wave integrated circuits

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