A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology

Tom Keinicke Johansen, M. Hossain, S. Boppel, R. Doerner, Viktor Krozer, W. Heinrich

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output. Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.
Original languageEnglish
Title of host publicationProceedings of the 14th European Microwave Integrated Circuits Conference
PublisherIEEE
Publication date2019
Pages180-3
ISBN (Print)978-2-87487-056-9
DOIs
Publication statusPublished - 2019
Event14th European Microwave Integrated Circuits Conference - Paris, France
Duration: 30 Sep 20191 Oct 2019

Conference

Conference14th European Microwave Integrated Circuits Conference
CountryFrance
CityParis
Period30/09/201901/10/2019
Series2019 14th European Microwave Integrated Circuits Conference (eumic). Proceedings

Keywords

  • Frequency multiplier
  • InP double heterojunction bipolar transistor
  • Millimeter-wave integrated circuits

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